Radio field intensity measurement device, and radio field intensity detector and game console using the same

ABSTRACT

The present invention provides a radio field intensity measurement device having a display portion with improved visibility, in the case of measuring a weak radiowave from a long distance. In the radio field intensity measurement device, a battery is provided as a power source for power supply and the battery is charged by a received radiowave. When a potential of a signal obtained from the received radiowave is higher than an output potential of the battery, the power is stored in the battery. On the other hand, when the potential of the signal obtained from the received radiowave is lower than the output potential of the battery, power produced by the battery is used as power to drive the radio field intensity measurement device. As an element to display the radio field intensity, a thermochromic element or an electrochromic element is used.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to radio field intensity measurementdevices which can display radio field intensity of radio signals. Inparticular, the present invention relates to radio field intensitymeasurement devices which change color in accordance with radiointensity of a radio signal, utilizing a chromic material, and radiofield intensity detectors and amusement devices (such as game consoles,game machines, toys or the like) using the radio field intensitymeasurement devices.

2. Description of the Related Art

In recent years, wireless devices using radio communication have beenspreading due to development of electronics and the coming of anadvanced information society, and have been utilized in various fieldssuch as military affairs, medical treatment, communication, education,and commercial transaction. Radio communication using a radiowave as acommunication medium takes the maximum advantages of radiowave thatinformation can be transmitted instantly independent from time anddistance, and one of the most important bases for human life andindustry in modern society.

A radiowave is a kind of electromagnetic waves, and a wave propagated inthe air by energy exchange between an electric field and a magneticfield. Since a radiowave cannot be seen, there is a concern that aradiowave emitted from facilities using radiowave and wireless devicesmay adversely affect human bodies. Thus, there is a need to provide adevice which can easily measure radio field intensity of a radiowaveemitted from a radio emission device, and display information on theradiowave.

There are various methods for measuring radio field intensity. Forexample, Reference 1, Japanese Published Patent Application No.2006-23817, discloses a radio field detector in which an antenna, arectifier circuit and a lamp are connected and radio field intensity isdetected by light intensity of a lamp. Further, Reference 2, JapanesePublished Patent Application No. 2001-165973, provides anelectromagnetic wave monitor in which an antennal, a storage device, andan informing means are connected, and the informing means is driven bythe storage device to measure a radio field intensity.

FIG. 38 is a block diagram illustrating a typical configuration of aradio field intensity measurement device disclosed in Reference 1.

In the radio field intensity measurement device 3800 illustrated in FIG.38, a received radiowave 3820 is converted to an induction signal andthe induction signal is input to a rectifier circuit 3811. The rectifiercircuit 3811 rectifies the induction signal and supplied power to thelamp 3812. In other words, electricity which goes up in proportion tothe intensity of the received radiowave 3820 is supplied to the lamp,and the intensity of the radiowave appears in the light intensity of thelamp which is turned on.

In the electromagnetic wave monitor in Reference 2, as the informingmeans, a light-emitting diode, a discharge lamp, or a liquid crystaldisplay device is used.

SUMMARY OF THE INVENTION

However, the radio field intensity measurement device of Reference 1 hasa problem of not detecting a weak radiowave, because the weak radiowaveemitted over long distance lights the lamp, and thus sufficient power isdifficult to secure. Further, in the electromagnetic wave monitor ofReference 2, a weak radiowave is measured to secure power to drive alight-emitting diode, a discharge lamp and a liquid crystal displaydevice as the informing means. However, Reference 2 has a problem inthat lighting of the informing means is difficult to be seen whenbrightness in surroundings is intense e.g., under sunlight.

The present invention has been made in view of the above problems. It isan object of the present invention to provide a radio field intensitymeasurement device which can measure a weak radiowave, and have adisplay portion which has a high level of visibility even whenbrightness in surroundings is intense e.g., under sunlight.

In order to solve the above problems, in accordance with the presentinvention, a battery is provided as a power source to supply power to aradio field intensity measurement device. The power to drive the radiofield intensity measurement device is produced from a receivedradiowave, and charged in the battery. When a potential of a signalobtained from the received radiowave is higher than an output potentialof the battery, the power is stored in the battery. On the other hand,when the potential of the signal obtained from the received radiowave islower than the output potential of the battery, power produced by thebattery is used as power to drive the radio field intensity measurementdevice.

A radio field intensity measurement device of the present inventionemploys a thermochromic material or an electrochromic (EC) material asan element to display radio field intensity, and includes a resistor ora voltage application element as a means of changing the color of such achromic material.

An aspect of the present invention is a radio field intensitymeasurement device which comprises an antenna to convert a receivedradiowave to an induction signal; a rectifier circuit configured tooutput a direct signal by rectifying the induction signal; a battery tobe charged by the direct signal; a control circuit configured to comparea potential of the direct signal with an output potential of thebattery; an amplifier circuit configured to amplify the direct signal;and a display element which is operated depending on the direct signalamplified by the amplifier circuit. In the radio field intensitymeasurement device, the control circuit charges the battery when thepotential of the direct signal is higher than the output potential ofthe battery, and when the potential of the direct signal is lower thanthe output potential of the battery, power of the battery is used as apower source to drive the amplifier circuit.

Another aspect of the present invention is a radio field intensitymeasurement device which comprises an antenna to convert a receivedradiowave to an induction signal; a rectifier circuit configured tooutput a direct signal by rectifying the induction signal; a battery tobe charged by the direct signal; a control circuit configured to comparea potential of the direct signal with an output potential of thebattery; an amplifier circuit configured to amplify the direct signal;and a display element which is operated depending on the direct signalamplified by the amplifier circuit. In the radio field intensitymeasurement device, the control circuit charges the battery when thepotential of the direct signal is higher than the output potential ofthe battery, when the potential of the direct signal is lower than theoutput potential of the battery, power of the battery is used as a powersource to drive the amplifier circuit, and a color of the displayelement is changed in accordance with a magnitude of the direct signalamplified by the amplifier circuit.

Another aspect of the present invention is a radio field intensitymeasurement device which comprises an antenna to convert a receivedradiowave to an induction signal; a rectifier circuit configured tooutput a direct signal by rectifying the induction signal; a battery tobe charged by the direct signal; a control circuit configured to comparea potential of the direct signal with an output potential of thebattery; an amplifier circuit configured to amplify the direct signal;and a display element which is operated depending on the direct signalamplified by the amplifier circuit. In the radio field intensitymeasurement device, the control circuit charges the battery when thepotential of the direct signal is higher than the output potential ofthe battery, when the potential of the direct signal is lower than theoutput potential of the battery, power of the battery is used as a powersource to drive the amplifier circuit, and the display element includesa resistance heating element and a thermochromic element.

Another aspect of the present invention is a radio field intensitymeasurement device which comprises an antenna to convert a receivedradiowave to an induction signal; a rectifier circuit configured tooutput a direct signal by rectifying the induction signal; a battery tobe charged by the direct signal; a control circuit configured to comparea potential of the direct signal with an output potential of thebattery; an amplifier circuit configured to amplify the direct signal;and a display element which is operated depending on the direct signalamplified by the amplifier circuit. In the radio field intensitymeasurement device, the control circuit charges the battery when thepotential of the direct signal is higher than the output potential ofthe battery, when the potential of the direct signal is lower than theoutput potential of the battery, power of the battery is used as a powersource to drive the amplifier circuit, and the display element includesa resistance heating element and a thermochromic element, and a color ofthe display element is changed in accordance with a magnitude of thedirect signal amplified by the amplifier circuit.

In the present invention, the thermochromic element includes athermotropic liquid crystal.

Another aspect of the present invention is a radio field intensitymeasurement device which comprises an antenna to convert a receivedradiowave to an induction signal; a rectifier circuit configured tooutput a direct signal by rectifying the induction signal; a battery tobe charged by the direct signal; a control circuit configured to comparea potential of the direct signal with an output potential of thebattery; an amplifier circuit configured to amplify the direct signal;and a display element which is operated depending on the direct signalamplified by the amplifier circuit. In the radio field intensitymeasurement device, the control circuit charges the battery when thepotential of the direct signal is higher than the output potential ofthe battery, when the potential of the direct signal is lower than theoutput potential of the battery, power of the battery is used as a powersource to drive the amplifier circuit, and the display element includesa voltage application element and an electrochromic element.

Another aspect of the present invention is a radio field intensitymeasurement device which comprises an antenna to convert a receivedradiowave to an induction signal; a rectifier circuit configured tooutput a direct signal by rectifying the induction signal; a battery tobe charged by the direct signal; a control circuit configured to comparea potential of the direct signal with an output potential of thebattery; an amplifier circuit configured to amplify the direct signal;and a display element which is operated depending on the direct signalamplified by the amplifier circuit. In the radio field intensitymeasurement device, the control circuit charges the battery when thepotential of the direct signal is higher than the output potential ofthe battery, when the potential of the direct signal is lower than theoutput potential of the battery, power of the battery is used as a powersource to drive the amplifier circuit, and the display element includesa voltage application element and an electrochromic element, and a colorof the display element is changed in accordance with a magnitude of thedirect signal amplified by the amplifier circuit.

In addition, in the present invention, the electrochromic elementincludes a metal oxide.

The battery of the present invention is a lithium battery, a lithiumpolymer battery, a lithium ion battery, a nickel hydride battery, anickel cadmium battery, an organic radical battery, a lead-acid battery,an air secondary battery, a nickel zinc battery, a silver zinc battery,or a capacitor.

The capacitor of the present invention is an electric double layercapacitor.

The radio field intensity detector of the present invention is attachedto an object to detect a radiowave.

An amusement device of the present invention comprises a plate-likeradio field intensity detector attached with the radio field intensitydetector and a radiowave emitter, and a color of the plate-like radiofield intensity detector is changed by using a radiowave emitted fromthe radiowave emitter.

It is to be noted that description “be connected” in the presentinvention indicates electrical connection. Therefore, in structuresdisclosed in the present invention, another element capable ofelectrical connection (e.g., a switch, a transistor, a capacitor, aninductor, a resistor, a diode, or the like) may be interposed betweenelements having a predetermined connection relation.

The present invention provides a radio field intensity measurementdevice which can measure a weak radiowave from a long distance. Further,the present invention provides a radio field intensity measurementdevice which has a high level of visibility even when brightness insurroundings is intense e.g., under sunlight.

BRIEF DESCRIPTION OF THE DRAWINGS

In the accompanying drawings:

FIG. 1 is a view describing Embodiment Mode 1;

FIG. 2 is a view describing Embodiment Mode 1;

FIGS. 3A to 3E are views describing Embodiment Mode 1;

FIG. 4 is a view describing Embodiment Mode 1;

FIG. 5 is a view describing Embodiment Mode 1;

FIG. 6 is a view describing Embodiment Mode 1;

FIGS. 7A and 7B are views describing Embodiment Mode 1;

FIG. 8 is a view describing Embodiment Mode 1;

FIG. 9 is a view describing Embodiment Mode 1;

FIG. 10 is a view describing Embodiment Mode 1;

FIG. 11 is a view describing Embodiment Mode 1;

FIG. 12 is a view describing Embodiment Mode 1;

FIGS. 13A and 13B are views describing Embodiment Mode 2;

FIGS. 14A to 14C are views describing Embodiment Mode 2;

FIGS. 15A and 15B are views describing Embodiment Mode 2;

FIG. 16 is a view describing Embodiment Mode 2;

FIGS. 17A to 17D are views describing Embodiment 1;

FIGS. 18A to 18C are views describing Embodiment 1;

FIGS. 19A and 19B are views describing Embodiment 1;

FIGS. 20A and 20B are views describing Embodiment 1;

FIGS. 21A and 21B are views describing Embodiment 1;

FIGS. 22A to 22C are views describing Embodiment 2;

FIGS. 23A to 23C are views describing Embodiment 2;

FIGS. 24A and 24B are views describing Embodiment 2;

FIGS. 25A to 25C are views describing Embodiment 3;

FIGS. 26A to 26C are views describing Embodiment 3;

FIGS. 27A to 27C are views describing Embodiment 3;

FIGS. 28A and 28B are views describing Embodiment 3;

FIGS. 29A and 29B are views describing Embodiment 4;

FIGS. 30A and 30B are views describing Embodiment 4;

FIGS. 31A and 31B are views describing Embodiment 4;

FIGS. 32A to 32C are views describing Embodiment 4;

FIGS. 33A and 33B are views describing Embodiment 4;

FIGS. 34A and 34B are views describing Embodiment 4;

FIGS. 35A and 35B are views describing Embodiment 4;

FIGS. 36A and 36B are views describing Embodiment 4;

FIGS. 37A and 37B are views describing Embodiment 5; and

FIG. 38 is a view describing an object of the present invention.

DETAILED DESCRIPTION OF THE INVENTION Embodiment Modes

Embodiment Modes of the present invention will be explained below withreference to the accompanied drawings. It is easily understood by thoseskilled in the art that modes and details disclosed herein can bemodified in various ways without departing from the spirit and the scopeof the present invention. Therefore, the present invention should not beinterpreted as being limited to the description of the embodiment modesto be given below. It is to be noted that, in the present inventionexplained below, there is a case that similar portions or portionshaving a similar function are denoted by the same reference numeralsthrough the drawings.

Embodiment Mode 1

Embodiment Mode 1 will describe a structure of a radio field intensitymeasurement device of the present invention.

FIG. 1 is a block diagram of a radio field intensity measurement deviceof the present invention. The radio field intensity measurement device100 includes an antenna 110, a rectifier circuit 111, a control circuit112, a battery 113, an amplifier circuit 114 and a display element 115.Note that the rectifier circuit 111, the control circuit 112 and theamplifier circuit 114 are collectively referred to as a signalprocessing circuit 120 for simple description.

FIG. 2 is a block diagram in which the antenna 110 receives a receivedradiowave 302 from a radiowave source 301. In FIG. 2, the radiowavereceived by the antenna 110 is converted into an induction signal andinput into the rectifier circuit 111. The rectifier circuit 111 convertsthe induction signal to a direct signal and outputs the direct signal.In addition, the direct signal output from the rectifier circuit 111 isinput into the battery 113 through the control circuit 112. Meanwhile,the direct signal output from the rectifier circuit 111 is amplified bythe amplifier circuit 114 and input into the display element 115. Thedisplay element 115 changes color in accordance with the direct signalamplified by the amplifier circuit 114.

The rectifier circuit 111, for example as illustrated in FIG. 4, a diode503, a diode 504, and a capacitor 505, and an induction signal receivedby the antenna 110 is half-wave rectified by the diode 504 and smoothedby the capacitor 505. The direct signal which is output from therectifier circuit 111 and which is half-wave rectified and smoothed issupplied to the control circuit 112.

The control circuit 112, for example as illustrated in FIG. 5, includesa diode 604, a diode 605, a voltage comparison circuit 601, a switch 602and a switch 603.

The voltage comparison circuit 601 compares an output potential of thebattery 113 with a potential of a direct signal output from therectifier circuit 111. When the potential of the direct signal outputfrom the rectifier circuit 111 is sufficiently higher than the outputpotential of the battery 113, the voltage comparison circuit 601 turnsthe switch 602 on and the switch 603 off. Thus, current flows to thebattery 113 from the rectifier circuit 111 through the diode 604 and theswitch 602. On the other, hand, when the potential of the direct signaloutput from the rectifier circuit 111 is not sufficiently higher thanthe output potential of the battery 113, the voltage comparison circuit601 turns the switch 602 off and the switch 603 on. At this time, whenthe potential of the direct signal output from the rectifier circuit 111is higher than the output potential of the battery 113, no current flowsto the diode 605. On the other hand, when the potential of the directsignal output from the rectifier circuit 111 is lower than the outputpotential of the battery 113, current flows to the amplifier circuit 114from the battery 113 through the switch 603 and the diode 605.

Note that the control circuit is not limited to the example inEmbodiment Mode 1, and may employs any mode.

As a switch employed in this specification, a transistor (e.g., abipolar transistor or a MOS transistor), a diode (e.g., a PN diode, aPIN diode, a Schottky diode, a MIM (Metal Insulator Metal) diode, a MIS(Metal Insulator Semiconductor) diode, or a diode-connected transistor),a thyristor, or the like can be used. Alternatively, a logic circuitcombining such elements can be used as a switch.

FIG. 6 illustrates an example of the voltage comparison circuit 601.

By the voltage comparison circuit 601, a voltage output from the battery113 is divided by resistors 701 and 702, and a voltage output from therectifier circuit 111 is divided by resistors 703 and 704. Then, thevoltages divided by the resistors are input to a comparator 705. Buffers706 and 707 of inverter topologies are connected in series with anoutput of the comparator 705. Then, an output of the buffer 706 is inputto a control terminal of the switch 603, and an output of the buffer 707is input to a control terminal of the switch 602, so that on/off of theswitches 602 and 603 in FIG. 6 is controlled. Note that when H-levelsignals are input to the control terminals of the switches 602 and 603,the switches 602 and 603 are turned on, whereas when L-level signals areinput, the switches 602 and 603 are turned off.

By regulating a voltage input to the comparator 705 by dividing anincoming voltage with the resistors, it becomes possible to control thetimings for turning the switch 602 on and turning the switch 603 off ata point when the voltage output from the rectifier circuit becomeshigher than the voltage output from the battery 113 by a certain level.Similarly, it becomes possible to control the timings for turning theswitch 602 off and turning the switch 603 on at a point when the voltageoutput from the rectifier circuit becomes lower than the voltage outputfrom the battery 113 by a certain level.

Note that the voltage comparison circuit is not limited to this examplein this embodiment mode, and may employ any mode.

With reference to the timing chart of FIG. 9, operation of the voltagecomparison circuit is described. A first waveform 1001 is a change of apotential after the division by the resistors 701 and 702 in FIG. 6. Asecond waveform 1002 is a change of a potential after the division bythe resistors 703 and 704 in FIG. 6. A first signal 1010 is a controlsignal which is output from the comparator 705 and is input to thebuffer 706 in FIG. 6. A second signal 1011 is a control signal which isoutput from the buffer 706 and is input to a control terminal of theswitch 603 in FIG. 6. A third signal 1012 is a control signal which isoutput from the buffer 707 and is input to a control terminal of theswitch 602 in FIG. 6. For simple description, a signal which is input tothe rectifier circuit 111 from the antenna 110 before rectification isdenoted by a waveform before rectification 1020 (a waveform of aninduction signal).

In FIG. 9, when the potential of the first waveform 1001 is higher thanthat of the second waveform 1002, i.e., when the amplitude of thewaveform before rectification which is a signal before rectification islarge, the first signal 1010 is at a high potential level (hereinafter,abbreviated as H), the second signal 1011 at a low potential level(hereinafter, abbreviated as L), and the third signal 1012 is H.Accordingly, the switch 603 to which L of the second signal 1011 isinput is turned off, and the switch 602 to which H of the third signal1012 is input is turned on. Thus, the battery 113 is charged asillustrated in FIG. 10. The period in which the battery 113 is chargedis regarded as a charge period 1030, and during this charge period 1030,the amplifier circuit 114 uses power output from the rectifier circuit111.

In FIG. 9, when the potential of the first waveform 1001 is lower thanthat of the second waveform 1002, i.e., the amplitude of the waveformbefore rectification 1020 which is a signal before rectification, issmall, the first signal 1010, the second signal 1011 and the thirdsignal 1012 are L, H, and L respectively. Accordingly, the switch 603 towhich H of the second signal 1011 is input is turned on, and the switch602 to which L of the third signal 1012 is input is turned off. Thus,the battery 113 is discharged as illustrated in FIG. 11. The period inwhich the battery 113 is discharged is regarded as a discharge period1031, and during this discharge period 1031, the amplifier circuit 114uses power output from the battery 113.

Therefore, the amplifier circuit 114 receives power either in the chargeperiod 1030 or the discharge period 1031.

Non-limiting examples of the battery 113 includes secondary batteriessuch as a lithium ion battery, a lithium secondary battery, a nickelmetal hydride battery, a nickel cadmium battery, and an organic radicalbattery. Alternatively, a capacitor having large capacity may be used.

Note that the term “charge” indicates that current flows to the battery113, so that power is stored in the battery 113. Specifically, in asecondary battery, “charge” means that electric energy input to thebattery 113 is converted to chemical energy to be stored. On the otherhand, the term “discharge” indicates that chemical energy in the battery113 is converted to electric energy to be output.

A capacitor having large capacity which can be used as the battery 113of the present invention is preferably a capacitor having electrodeswhose opposed areas are large. In particular, it is preferable to use anelectric double layer capacitor which is formed from an electrodematerial having a large specific surface area such as activated carbon,fullerene, or a carbon nanotube. A capacitor has a simpler structurethan a battery. Further, a capacitor can be easily formed to be thin andformed by stacking layers. An electric double layer capacitor has afunction of storing power and will not deteriorate so much even after itis charged and discharged a large number of times. Further, the electricdouble layer capacitor has an excellent property in that it can becharged rapidly.

For the display element 115, an element including a material exhibitinga chromism phenomenon, such as a thermochromic material or anelectrochromic material, can be used, but not limited to such anelement.

Next, with reference to the timing chart of FIG. 12, operation of theradio field intensity measurement device is described. A first waveform1201 is a potential change of a direct signal which is rectified in therectifier circuit 111 and is input to the amplifier circuit 114 in FIG.2. A second waveform 1202 is a potential change of a signal which isoutput from the control circuit 112 and is input to the amplifiercircuit 114 as power in FIG. 2. Note that the second waveform 1202 isthe same as the second waveform 1002 in FIG. 9. A third waveform 1203 isa potential change of voltage, which is obtained by amplifying the firstwaveform 1201 input into the amplifier circuit 114 in FIG. 2 with theamplifier circuit 114 to be input to the display element 115. For simpledescription, a signal which is input to the rectifier circuit 111 fromthe antenna 110 before rectification is denoted by a waveform beforerectification 1220 (a waveform of an induction signal). A period inwhich the waveform before rectification 1220 is small is denoted by aweak radiowave period 1221, and a period in which the waveform beforerectification 1220 is large is denoted by a strong radiowave period1222, and the minimum operation voltage of the display element 115 isdenoted by reference numeral 1223. The minimum operation voltage is aminimum voltage at which the display element 115 can cause color changewhich is visible to human eyes.

In FIG. 12, in the weak radiowave period 1221, the first waveform 1201is amplified as shown by the third waveform 1203. In addition, also inthe strong radiowave period 1222, the first waveform 1201 is amplifiedas shown by the third waveform 1203. In this case, the ratio of increasefrom the first waveform 1201 to the third waveform (V₂/V₁) is referredto as an amplification ratio. Note that the amplifier circuit 114 mayhave such an amplification ratio that the third waveform afteramplification exceeds the minimum operation voltage 1223.

Therefore, the display element 115 can operate either in the weakradiowave period 1221 or the strong radiowave period 1222.

Then, FIG. 7A schematically illustrates of a radio field intensitymeasurement device of the present invention.

The radio field intensity measurement device illustrated in FIG. 7Aincludes an antenna 810, a signal processing circuit 811, a battery 812and a display element 813 over a substrate 801. The antenna 810 includesa connection terminal 820 and a connection terminal 821. The connectionterminals 820 and 821 of the antenna 810 are both connected to thesignal processing circuit 811.

As a transistor which can be used for the signal processing circuit 811,various types of transistors can be applied without being limited toparticular types of transistors. Accordingly, a thin film transistor(TFT) using a non-single crystalline semiconductor film typified byamorphous silicon or polycrystalline silicon, a transistor formed byusing a semiconductor substrate or an SOI substrate, a MOS transistor, ajunction transistor, a bipolar transistor, a transistor using a compoundsemiconductor such as ZnO or a-InGaZnO, a transistor using an organicsemiconductor or a carbon nanotube, or other transistors can be applied.Note that a non-single crystalline semiconductor film may includehydrogen or halogen.

In addition, various types of substrates can be employed as thesubstrate 801 without particular limitations. Accordingly, for example,a single crystalline substrate, an SOI substrate, a glass substrate, aquartz substrate, a plastic substrate, a paper substrate, a cellophanesubstrate, a stone substrate, or the like can be used. In addition, thesignal processing circuit 811 may be formed over one substrate, and thenthe signal processing circuit 811 may be transferred to anothersubstrate.

There are no particular limitations on the shape of the antenna 810. Forexample, as illustrated in FIG. 3A, an antenna 403 may be provided inthe whole area around a signal processing circuit 402 over a substrate401. As illustrated in FIG. 3B, a thin antenna 403 may be provided inthe area around the signal processing circuit 402 over the substrate401. As illustrated in FIG. 3C, the antenna may have such a shape thatreceives a high frequency electromagnetic wave. As illustrated in FIG.3D, the antenna may have a 180-degree nondirectional shape. Asillustrated in FIG. 3E, the antenna may have a stick-like elongatedshape. For example, the shape such as a so-called dipole antenna, a loopantenna, a Yagi antenna, a patch antenna, or a minute antenna can beemployed.

Although FIGS. 3A to 3E do not illustrate elements corresponding to thebattery and the display element for simple description, the radio fieldintensity measurement device according to Embodiment Mode 1 includes abattery and a display element.

The antenna 810 illustrated in FIG. 7A may be formed over the substrateprovided with the signal processing circuit 811 or a substrate differentfrom the substrate provided with the signal processing circuit 811.Various types of substrates can be used as a substrate to be providedwith the antenna 810, and not-limiting examples of the substrateincludes a single crystalline substrate, an SOI substrate, a glasssubstrate, a quartz substrate, a plastic substrate, a paper substrate, acellophane substrate, a stone substrate and the like. In the case wherethe antenna 810 is formed over the same substrate as the signalprocessing circuit 811, the antenna 810 may be formed by depositing aconductive film by sputtering, CVD, spin coating, or the like and thenpatterning the conductive film; or the antenna 810 may be formed by adroplet discharge method typified by an ink-jet method, a screenprinting method, or the like. Also in the case where the antenna 810 isformed over a substrate which is different from the substrate over whichthe signal processing circuit 811 is formed, the antenna 810 can beformed by any of the aforementioned methods; however, preferably, theantenna 810 is formed by the screen printing method.

There are no particular limitations on the method of connecting thesubstrate provided with the signal processing circuit to the antenna.For example, wire bonding or a bump may be adopted to connect theantenna and the substrate provided with the signal processing circuit,or a method where a surface of the substrate provided with a signalprocessing circuit formed in a chip form is made as an electrode and theelectrode is attached to the antenna may be employed. In this method, ananisotropic conductive film (ACF) can be used to connect the antenna andthe substrate.

In addition, an appropriate length of the antenna varies depending on afrequency for receiving signals. For example, when the frequency is 2.45GHz, a half-wave dipole antenna may have a length of a half wavelength(about 60 mm), or a monopole antenna may have a length of a quarterwavelength (about 30 mm).

The antenna may include a means of changing frequency of a receivedsignal. For example, when a loop antenna is used for the antenna, aresonant circuit may be formed from an antenna coil 901 and a capacitor902 included in the antenna 110 as illustrated in FIG. 8.

Further, in FIG. 7A, the antenna 810 is formed over the same substrateas the signal processing circuit 811, or may be provided as an externalantenna. As illustrated in FIG. 7A, when the antenna 810 is formed overthe same substrate 801 as the signal processing circuit 811, the shapeof the antenna is preferably a shape of a minute loop antenna, a minutedipole antenna or the like.

As the battery 812, secondary batteries can be used, such as a lithiumion battery, a lithium secondary battery, a nickel hydride battery, anickel cadmium battery, an organic radical battery, a lead-acid battery,an air secondary battery, a nickel zinc battery, a silver zinc battery,and the like. The battery is not limited to these examples, and ahigh-capacity capacitor may be used. In particular, a lithium ionbattery and a lithium secondary battery have high charging anddischarging capacity. Therefore, such a lithium ion battery or such alithium secondary battery can be used as a battery provided for theradio field intensity measurement device of Embodiment Mode 1 in thepresent invention, and thus miniaturization thereof can be achieved. Itis to be noted that an active material or an electrolyte of a lithiumion battery is formed by a sputtering method; therefore, the battery 812may be formed over a substrate over which the signal processing circuit811 is formed or a substrate over which the antenna 810 is formed. Thebattery 812 is formed over the substrate over which the signalprocessing circuit 811 or the antenna 810 is formed, and thus yield isimproved. In a metal lithium battery, a transition metal oxide includinglithium ions, a metal oxide, a metal sulfide, an iron compound, aconductive polymer, an organic sulfur compound, or the like is used foran anode active material; lithium (alloy) is used for a cathode activematerial; and an organic electrolyte solution, a polymer electrolyte, orthe like is used for an electrolyte. Therefore, the battery 812 can havehigher charging and discharging capacity.

For the display element 813, an element including a material exhibitingchromism phenomena, such as a thermochromic material or anelectrochromic material, can be used, but not limited to this element.In particular, as an element including a thermochromic material (alsoreferred to as a thermochromic element), an element including athermotropic liquid crystal (also referred to as a thermochromic liquidcrystal), especially an element including a cholesteric liquid crystalis preferable, and the cholesteric liquid crystal may includecholesteryl oleyl carbonate, cholesteryl nonanoate, or cholesterylbenzoate. In addition, as the element including the electrochromicmaterial (also referred to as an electrochromic element), an elementincluding a metal oxide such as tungsten oxide or a related compoundthereof may be used.

The structure of the radio field intensity measurement device accordingto Embodiment Mode 1 in the present invention is not limited to that ofFIG. 7A. For example, in FIG. 7B, the signal processing circuit 811 isprovided between the antenna 810 and the battery 812; however, thebattery 812 may be provided between the antenna 810 and the signalprocessing circuit 811 or the antenna 810 may be provided between thebattery 812 and the signal processing circuit 811. The area ratio of theantenna 810, the battery 812 and the signal processing circuit 811 isnot limited to the example of FIGS. 7A and 7B. In other words, in thecase where each layer in the cross-section of the radio field intensitymeasurement device according to this embodiment mode in the presentinvention is seen, there are no particular limitations on the positionalrelationship of the antenna 810, the battery 812 and the signalprocessing circuit 811. In addition, the antenna 810 and the signalprocessing circuit 811 may be formed over different substrates, or theantenna 810, the signal processing circuit 811, and the battery 812 maybe formed over the same substrate. Note that, preferably, the displayelement 813 is disposed in the uppermost layer for improving visibilityand has a large area.

The radio field intensity measurement device of Embodiment Mode 1 in thepresent invention has a battery which can store power, and replacingbatteries is not needed. Furthermore, even when a received signal isweak, power can be supplied from the battery to the signal processingcircuit, and thus the radio field intensity measurement device canoperate to measure the intensity of the radiowave. In other words, sincethe radio field intensity measurement device can measure the intensityof the radiowave having a weak signal, sensitivity improvement andstable measurement of the radio field intensity measurement device canbe achieved.

Moreover, when a received signal is strong, the battery can beautomatically charged, and thus it is unnecessary that a user botherscharging. Needless to say, if the power stored in the battery becomessmall, a user can easily charge the battery by himself/herself.

Embodiment Mode 2

Embodiment Mode 2 will describe a mode in which a display elementincluding a thermochromic material is formed.

FIGS. 13A and 13B schematically illustrate a display element in thepresent invention. A display element 2500 includes a resistance heatingelement 2502, a thermochromic material 2503, a transparent substrate2504, a connection terminal 2510 and a connection terminal 2511 over alight-shielding substrate 2501. One of the connection terminals 2510 and2511 is connected to a power supply terminal. For example, one of theconnection terminals 2510 and 2511 is connected to the amplifier circuit114 in Embodiment Mode 1. Note that the other of the connectionterminals 2510 and 2511, which is not connected to the power supplyterminal, is connected to a GND terminal.

The structure of the display element in Embodiment Mode 2 is not limitedto that in FIGS. 13A and 13B. For example, the thermochromic material2503 is arranged above the resistance heating element 2502 in FIGS. 13Aand 13B; alternatively the resistance heating element 2502 may bearranged over the thermochromic material 2503. The shape and area of theresistance heating element 2502 and the thermochromic material 2503 arenot limited to those of FIGS. 13A and 13B. For example, a comb-likeshape or a convex-concave shape may be employed. Wider areas of theresistance heating element 2502 and the thermochromic material 2503 arepreferably in contact with each other to enhance thermal conductivity.

In this embodiment mode, “the resistance heating element” indicatesgeneral elements which generate heat by electrical power. The amount ofgenerated heat is changed in accordance with the power amount suppliedfrom a connection terminal to the resistance heating element. Varioussubstances can be used as materials of the resistance heating element inthis embodiment mode. Thus, there are no particular limitations on theapplicable material for the resistance hating element.

The thermochromic material in this embodiment mode indicates generalsubstances which exhibit thermochromism phenomena. The thermochromismphenomenon is phenomena that color of a material is reversibly changedby heat stimulation. Thus, color is changed depending on the amount ofheat supplied from the resistance heating element 2502. In other words,color is changed in accordance with the amount of power supplied to thedisplay element through the connection terminal. Various substances canbe used as a themlochromic material included in the display element ofthis embodiment mode. Thus, there are no particular limitations on thetype of the applicable thermochromic material.

A cholesteric liquid crystal, which is one example of thermochromicmaterial in this embodiment mode, has a feature that a torsional stateof the helix is changed depending on temperature. The molecularstructure of the cholesteric liquid crystal and the principal of colorchange depending on the change of the molecular structure of thecholesteric liquid crystal are described with reference to FIGS. 14A,14B and FIGS. 15A, 15B.

The cholesteric liquid crystal preferably includes cholesteryl oleylcarbonate in which one side of a carbonate group 2100 is bound to acholesteryl group 2101 and the other side of the carbonate group isbound to an oleyl group 2102 which is a straight-chain hydrocarbon groupas illustrated in FIG. 14A. In FIG. 14A, cholesteryl oleyl carbonate, acompound in which the carbonate group 2100 and the oleyl group 2102 arebound to the cholesteryl group 2101 is shown. Cholesteryl benzoate, acompound in which a benzoate group 2103 is bonded to the chlesterylgroup 2101, instead of the carbonate group 2100 and the oleyl group2102, as illustrated in FIG. 14B, or cholesteryl nanoate, a compound inwhich a nanoate group 2104 is bonded to the chlesteryl group 2101,instead of the carbonate group 2100 and the oleyl group 2102, asillustrated in FIG. 14C may be used. The mixed ratio of liquid crystalmolecules including different straight-chain hydrocarbons such ascholesteryl oleyl carbonate, cholesteryl nanonate, and cholesterylbenzoate is changed to change the color of the cholesteric liquidcrystal.

The cholesteric liquid crystal has a helical molecular structure andpartially reflects incident light. This reflecting property is changeddepending on the torsional state of the helix. For example, acholesteric liquid crystal molecule having a pitch P selectivelyreflects only a wavelength (λ=n (refractive index of a cholestericliquid crystal)×P) of wavelengths included in incident light. Forexample, the liquid crystal molecule 2002 of FIG. 15A has a torsioncorresponding to ¼ pitch in a distance d between a transparent substrate2000 and a light-shielding substrate 2001, and thus only a wavelength(λ=n×P=n×4d) of wavelengths included in the incident light 2003 isselectively reflected. In addition, a liquid crystal molecule 2002illustrated in FIG. 15B has a torsion corresponding to ¾ pitch in thedistance d, and thus a wavelength (λ=n×P=n×4/3d) of wavelengths includedin the incident light 2003 is selectively reflected.

Human eyes recognize a difference in a wavelength of light as adifference of a color. Therefore, reflection light 2004 of FIG. 15A andreflection light 2004 of FIG. 15B have different wavelengths and arerecognized as different colors.

The transparent substrate 2000 illustrated in FIGS. 15A and 15B may betransparent to human eyes. Preferably, the substrate transmits allwavelengths. The light-shielding substrate 2001 illustrated in FIGS. 15Aand 15B may be a substrate which is black to human eyes. Preferably, thesubstrate absorbs all wavelengths.

FIG. 16 is a cross-sectional view illustrating a thermochromic elementwhich is a display element including a thermochromic material. Wirings2203 a and 2203 b are provided over the light-shielding substrate 2201with a base layer 2202 interposed therebetween. The wiring 2203 a andthe wiring 2203 b are connected to a resistance heating element 2229 ina contact portion 2206 and a contact portion 2207 provided in aninterlayer insulating film 2204 and an insulating film 2205. Theresistance heating element 2229 generates heat by current flowingbetween the contact opening portion 2206 and the contact opening portion2207 to heat a thermochromic material 2211. Note that the wirings 2203 aand 2203 b are connected to connection terminals in FIG. 13.

A transparent substrate 2214 is disposed opposite to the light-shieldingsubstrate 2201. A thermochromic material 2211 is provided between thelight-shielding substrate 2201 and the transparent substrate 2214. Thedistance between the light-shielding substrate 2201 and the transparentsubstrate 2214 is kept by a spacer 2210. After a thermochromic material2211 is provided between the light-shielding substrate 2201 and thetransparent substrate 2214, the light-shielding substrate 2201 and thetransparent substrate 2214 are fixed by a sealing material 2220. It ispreferable that the distance between the light-shielding substrate 2201and the transparent substrate 2214 is narrow, since a small amount ofthe thermochromic material 2211 is used and the heat amount of thethermochromic material 2211 to be heated is small, which achieves rapidcolor change.

In such a display element, by voltage application to the resistanceheating element 2229, the heat amount supplied to the thermochromicmaterial 2211 is changed, and thus the state of the thermochromicmaterial 2211 is changed, so that a color tone reflection light 2231 isdifferent from that of incident light 2230.

Embodiment 1

Embodiment 1 will describe an example of a method for manufacturing theradio field intensity measurement device shown in the above-describedembodiment modes with reference to drawings. In this embodiment, astructure in which an antenna, and a signal processing circuit of theradio field intensity measurement device are formed using thin filmtransistors over the same substrate will be explained. It is to be notedthat when an antenna and a signal processing circuit are formed togetherover the same substrate, reduction in size of the radio field intensitymeasurement device can be achieved, which is advantageous. In addition,in this embodiment, an example will be explained, in which a thin-filmsecondary battery is used as the battery in the signal processingcircuit. Needless to say, instead of the secondary battery, a capacitorsuch as an electric double layer capacitor may be used.

First, a peeling layer 1303 is formed over one surface of a substrate1301 with an insulating film 1302 interposed therebetween, and then aninsulating film 1304 functioning as a base film and a semiconductor film(e.g., a film containing amorphous silicon) 1305 are stacked thereover(see FIG. 17A). It is to be noted that the insulating film 1302, thepeeling layer 1303, the insulating film 1304, and the semiconductor film1305 can be formed consecutively.

The substrate 1301 is selected from a glass substrate, a quartzsubstrate, a metal substrate (e.g., a ceramic substrate or a stainlesssteel substrate), a semiconductor substrate such as a Si substrate, orthe like. Alternatively, a plastic substrate made of polyethyleneterephthalate (PET), polyethylene naphthalate (PEN), polyether sulfone(PES), acrylic, or the like can be used. In this process, although thepeeling layer 1303 is provided over the entire surface of the substrate1301 with the insulating film 1302 interposed therebetween, the peelinglayer 1303 can also be selectively formed by photolithography afterbeing provided over the entire surface of the substrate 1301.

The insulating films 1302 and 1304 are formed using insulating materialssuch as silicon oxide, silicon nitride, silicon oxynitride(SiO_(x)N_(y), where x>y>0), or silicon nitride oxide (SiN_(x)O_(y),where x>y>0) by a CVD method, a sputtering method, or the like. Forexample, when each of the insulating films 1302 and 1304 is formed tohave a two-layer structure, a silicon nitride oxide film may be formedas a first insulating film and a silicon oxynitride film may be formedas a second insulating film. In addition, a silicon nitride film may beformed as a first insulating film and a silicon oxide film may be formedas a second insulating film. The insulating film 1302 functions as ablocking layer which prevents an impurity element contained in thesubstrate 1301 from getting mixed into the peeling layer 1303 orelements formed thereover. The insulating film 1304 functions as ablocking layer which prevents an impurity element contained in thesubstrate 1301 or the peeling layer 1303 from getting mixed intoelements formed over the insulating film 1304. In this manner, providingthe insulating films 1302 and 1304 which function as the blocking layerscan prevent adverse effects on the elements formed over the peelinglayer 1303 or the insulating film 1304, which would otherwise be causedby an alkali metal such as Na or an alkaline earth metal contained inthe substrate 1301 or by the impurity element contained in the peelinglayer 1303. It is to be noted that when quartz is used for the substrate1301, for example, the insulating films 1302 and 1304 may be omitted.

The peeling layer 1303 may be formed using a metal film, a stackedstructure of a metal film and a metal oxide film, or the like. As ametal film, either a single layer or stacked layers is/are formed usingan element selected from tungsten (W), molybdenum (Mo), titanium (Ti),tantalum (Ta), niobium (Nb), nickel (Ni), cobalt (Co), zirconium (Zr),zinc (Zn), ruthenium (Ru), rhodium (Rh), palladium (Pd), osmium (Os),and iridium (Ir), or an alloy material or a compound material containingsuch an element as its main component. In addition, such materials canbe formed by a sputtering method, various CVD methods such as a plasmaCVD method, or the like. A stacked structure of a metal film and a metaloxide film can be obtained by the steps of forming the above-describedmetal film, applying plasma treatment thereto under an oxygen atmosphereor an N₂O atmosphere or applying heat treatment thereto under an oxygenatmosphere or an N₂O atmosphere, and thereby forming oxide or oxynitrideof the metal film on the surface of the metal film. For example, when atungsten film is provided as a metal film by a sputtering method, a CVDmethod, or the like, a metal oxide film of tungsten oxide can be formedon the surface of the tungsten film by application of plasma treatmentto the tungsten film. In that case, the tungsten oxide can berepresented by WO_(x) where x is in the range of 2 to 3. For example,there are cases where x is 2 (WO₂), x is 2.5 (W₂O₅), x is 2.75 (W₄O₁₁),x is 3 (WO₃), and the like. When tungsten oxide is formed, there is noparticular limitation on the value of x, and thus, which of the aboveoxides is to be formed may be determined base on the etching rate or thelike. In addition, after a metal film (e.g., tungsten) is formed, aninsulating film formed of silicon oxide (SiO₂) or the like may be formedover the metal film by a sputtering method, and also metal oxide (e.g.,tungsten oxide on tungsten) may be formed on the metal film. Moreover,high-density-plasma treatment as described above may be applied as theplasma treatment, for example. Besides, metal nitride or metaloxynitride may also be formed. In that case, plasma treatment or heattreatment may be applied to the metal film under a nitrogen atmosphereor an atmosphere containing nitrogen and oxygen.

The amorphous semiconductor film 1305 is formed with a thickness of 25to 200 nm (preferably, 30 to 150 nm) by a sputtering method, an LPCVDmethod, a plasma CVD method, or the like.

Next, the amorphous semiconductor film 1305 is crystallized by laserirradiation. Alternatively, the crystallization of the amorphoussemiconductor film 1305 may be performed by a method combining the lasercrystallization with a thermal crystallization method using RTA or anannealing furnace or with a thermal crystallization method using a metalelement that promotes the crystallization. After that, the crystallizedsemiconductor film is etched into a desired shape, whereby crystallinesemiconductor films 1305 a to 1305 f are formed. Then, a gate insulatingfilm 1306 is formed so as to cover the semiconductor films 1305 a to1305 f (see FIG. 17B).

The gate insulating film 1306 is formed using an insulating materialsuch as silicon oxide, silicon nitride, silicon oxynitride(SiO_(x)N_(y), where x>y>0), or silicon nitride oxide (SiN_(x)O_(y),where x>y>0) by a CVD method, a sputtering method, or the like. Forexample, when the gate insulating film 1306 is formed to have atwo-layer structure, it is preferable to form a silicon oxynitride filmas a first insulating film and form a silicon nitride oxide film as asecond insulating film. Alternatively, it is also preferable to form asilicon oxide film as a first insulating film and form a silicon nitridefilm as a second insulating film.

An example of a formation process of the crystalline semiconductor films1305 a to 1305 f is briefly explained below. First, an amorphoussemiconductor film with a thickness of 50 to 60 nm is formed by a plasmaCVD method. Then, a solution containing nickel which is a metal elementthat promotes crystallization is retained on the amorphous semiconductorfilm, which is followed by dehydrogenation treatment (500° C. for onehour) and thermal crystallization treatment (550° C. for four hours).Thus, a crystalline semiconductor film is formed. Then, the crystallinesemiconductor film is subjected to laser irradiation and then aphotolithography process to form the crystalline semiconductor films1305 a to 1305 f. It is to be noted that crystallization of theamorphous semiconductor film may be performed only by laser irradiation,not by thermal crystallization which uses a metal element that promotescrystallization.

As a laser oscillator used for crystallization, either a continuous wavelaser (a CW laser) or a pulsed laser can be used. As a laser that can beused here, there are gas lasers such as an Ar laser, a Kr laser, and anexcimer laser; a laser whose medium issingle-crystalline YAG, YVO₄,forsterite (Mg₂SiO₄), YAlO₃, or GdVO₄ or polycrystalline (ceramic) YAG,Y₂O₃, YVO₄, YAlO₃, or GdVO₄ doped with one or more of Nd, Yb, Cr, Ti,Ho, Er, Tm, and Ta as a dopant; a glass laser; a ruby laser; analexandrite laser; a Ti:sapphire laser; a copper vapor laser; and a goldvapor laser. When irradiation is performed with the fundamental wave ofsuch a laser beam or the second to fourth harmonics of the fundamentalwave, crystals with a large grain size can be obtained. For example, thesecond harmonic (532 nm) or the third harmonic (355 nm) of an Nd:YVO₄laser (the fundamental wave of 1064 nm) can be used. In this case, alaser power density of approximately 0.01 to 100 MW/cm² (preferably, 0.1to 10 MW/cm²) is needed, and irradiation is performed with a scanningrate of approximately 10 to 2000 cm/sec. It is to be noted that thelaser whose medium is single crystal YAG, YVO₄, forsterite (Mg₂SiO₄),YAlO₃, or GdVO₄ or polycrystalline (ceramic) YAG, Y₂O₃, YVO₄, YAlO₃, orGdVO₄ doped with one or more of Nd, Yb, Cr, Ti, Ho, Er, Tm, and Ta as adopant; an Ar ion laser, or a Ti:sapphire laser can be used as a CWlaser, whereas it can also be used as a pulsed laser with a repetitionrate of 10 MHz or more by a Q-switch operation, mode locking, or thelike. When a laser beam with a repetition rate of 10 MHz or more isused, a semiconductor film is irradiated with the next pulse during theperiod in which the semiconductor film has been melted by the laser beamand is solidified. Therefore, unlike the case of using a pulsed laserwith a low repetition rate, a solid-liquid interface in thesemiconductor film can be continuously moved. Thus, crystal grains whichhave grown continuously in the scanning direction can be obtained.

The gate insulating film 1306 may be formed by oxidization ornitridation of the surfaces of the semiconductor films 1305 a to 1305 fby the above-described high-density plasma treatment. For example,plasma treatment with a mixed gas of a rare gas such as He, Ar, Kr, orXe, and oxygen, nitrogen oxide (NO₂), ammonia, nitrogen, or hydrogen isconducted. When plasma is excited by the introduction of microwaves,plasma with a low electron temperature and high density can begenerated. With oxygen radicals (which may include OH radicals) ornitrogen radicals (which may include NH radicals) which are generated bythe high-density plasma, the surfaces of the semiconductor films can beoxidized or nitrided.

By such high-density plasma treatment, an insulating film with athickness of 1 to 20 nm, typically 5 to 10 nm, is formed on thesemiconductor films. Since the reaction in this case is a solid-phasereaction, the interface state density between the insulating film andthe semiconductor films can be quite low. Since such high-density plasmatreatment directly oxidizes (or nitrides) the semiconductor films(crystalline silicon or polycrystalline silicon), desirably, theinsulating film can be formed with extremely little unevenness. Inaddition, since crystal grain boundaries of crystalline silicon are notstrongly oxidized, an excellent state is obtained. That is, by thesolid-phase oxidation of the surfaces of the semiconductor films byhigh-density plasma treatment which is described in this embodiment, aninsulating film with a uniform thickness and low interface state densitycan be formed without excessive oxidation reaction at the crystal grainboundaries.

As the gate insulating film, only an insulating film formed byhigh-density plasma treatment may be used, or a stacked layer may beemployed, which is obtained by deposition of an insulating film such assilicon oxide, silicon oxynitride, or silicon nitride on the insulatingfilm, by a CVD method using plasma or thermal reaction. In either case,a transistor which includes such an insulating film formed byhigh-density plasma treatment in a part or the whole of its gateinsulating film can have reduced characteristic variations.

In addition, the semiconductor films 1305 a to 1305 f, which areobtained by irradiation of a semiconductor film with a continuous wavelaser beam or a laser beam oscillated with a repetition rate of 10 MHzor more and scanning the semiconductor film with the laser beam in onedirection to crystallize the semiconductor film, have a characteristicin that their crystals grow in the beam scanning direction. Transistorsare each arranged so that its channel length direction (direction inwhich carriers move when a channel formation region is formed) isaligned with the scanning direction, and the above-described gateinsulating film is combined with the semiconductor film, whereby thinfilm transistors (TFTs) with high electron field effect mobility andreduced variations in characteristics can be obtained.

Next, a first conductive film and a second conductive film are stackedover the gate insulating film 1306. Here, the first conductive film isformed to a thickness of 20 to 100 nm by a CVD method, a sputteringmethod, or the like. The second conductive film is formed to a thicknessof 100 to 400 nm. The first conductive film and the second conductivefilm are formed of an element selected from tantalum (Ta), tungsten (W),titanium (Ti), molybdenum (Mo), aluminum (Al), copper (Cu), chromium(Cr), niobium (Nb), or the like, or an alloy material or a compoundmaterial containing such an element as its main component.Alternatively, the first conductive film and the second conductive filmare formed of semiconductor materials typified by polycrystallinesilicon doped with an impurity element such as phosphorus. As acombination example of the first conductive film and the secondconductive film, a tantalum nitride film and a tungsten film; a tungstennitride film and a tungsten film; a molybdenum nitride film and amolybdenum film; and the like can be given. Tungsten and tantalumnitride have high heat resistance. Therefore, after forming the firstconductive film and the second conductive film, thermal treatment forthe purpose of heat activation can be applied thereto. In addition, inthe case where a two-layer structure is not employed, but a three-layerstructure is employed, it is preferable to use a stacked structure of amolybdenum film, an aluminum film, and a molybdenum film.

Next, a resist mask is formed by photolithography, and etching treatmentis conducted to form gate electrodes and gate lines. Thus, gateelectrodes 1307 are formed above the semiconductor films 1305 a to 1305f. Here, a stacked structure of a first conductive film 1307 a and asecond conductive film 1307 b is shown as an example of the gateelectrode 1307.

Next, the semiconductor films 1305 a to 1305 f are doped with an n-typeimpurity element at low concentration, using the gate electrodes 1307 asmasks by an ion doping method or an ion implantation method. Then, aresist mask is selectively formed by photolithography, and thesemiconductor films 1305 c and 1305 e are doped with a p-type impurityelement at high concentration. As an n-type impurity element, phosphorus(P), arsenic (As), or the like can be used. As a p-type impurityelement, boron (B), aluminum (Al), gallium (Ga), or the like can beused. Here, phosphorus (P) is used as an n-type impurity element and isselectively introduced into the semiconductor films 1305 a to 1305 f soas to be contained at concentrations of 1×10¹⁵ to 1×10¹⁹/cm³. Thus,n-type impurity regions 1308 are formed. In addition, boron (B) is usedas a p-type impurity element, and is selectively introduced into thesemiconductor films 1305 c and 1305 e so as to be contained atconcentrations of 1×10¹⁹ to 1×10²⁰/cm³. Thus, p-type impurity regions1309 are formed (see FIG. 17C).

Subsequently, an insulating film is formed so as to cover the gateinsulating film 1306 and the gate electrodes 1307. The insulating filmis formed to have either a single layer or a stacked layer of a filmcontaining an inorganic material such as silicon, silicon oxide, orsilicon nitride, or a film containing an organic material such as anorganic resin by a plasma CVD method, a sputtering method, or the like.Next, the insulating film is selectively etched by anisotropic etchingmainly in the perpendicular direction, so that insulating films 1310(also referred to as sidewalls) which are in contact with the sidesurfaces of the gate electrodes 1307 are formed. The insulating films1310 are used as masks in doping for forming LDD (Lightly Doped Drain)regions.

Next, the semiconductor films 1305 a, 1305 b, 1305 d, and 1305 f aredoped with an n-type impurity element at high concentration, usingresist masks formed by photolithography, the gate electrodes 1307 andthe insulating films 1310 as masks. Thus, n-type impurity regions 1311are formed. Here, phosphorus (P) is used as an n-type impurity element,and is selectively introduced into the semiconductor films 1305 a, 1305b, 1305 d, and 1305 f so as to be contained at concentrations of 1×10¹⁹to 1×10²⁰/cm³. Thus, the n-type impurity regions 1311 with higherconcentration of impurity than that of the impurity regions 1308 areformed.

Through the above steps, n-channel thin film transistors 1300 a, 1300 b,1300 d, and 1300 f, and p-channel thin film transistors 1300 c and 1300e are formed (see FIG. 17D).

In the n-channel thin film transistor 1300 a, a channel formation regionis formed in a region of the semiconductor film 1305 a which overlapswith the gate electrode 1307; the impurity regions 1311 serving assource and drain regions are formed in regions of the semiconductor film1305 a which do not overlap with the gate electrode 1307 and theinsulating film 1310; and low concentration impurity regions (LDDregions) are formed in regions of the semiconductor film 1305 a whichoverlap with the insulating film 1310,between the channel formationregion and the impurity regions 1311. Similarly, channel formationregions, low concentration impurity regions, and the impurity regions1311 are formed in the n-channel thin film transistors 1300 b, 1300 d,and 1300 f.

In the p-channel thin film transistor 1300 c, a channel formation regionis formed in a region of the semiconductor film 1305 c which overlapswith the gate electrode 1307, and the impurity regions 1309 serving assource and drain regions are formed in regions of the semiconductor film1305 c which do not overlap with the gate electrode 1307. Similarly, achannel formation region and the impurity regions 1309 are formed in thep-channel thin film transistor 1300 e. Here, although LDD regions arenot formed in the p-channel thin film transistors 1300 c and 1300 e, LDDregions may be provided in the p-channel thin film transistors or astructure without LDD regions may be applied to the n-channel thin filmtransistors.

Next, an insulating film with a single layer structure or a stackedlayer structure is formed so as to cover the semiconductor films 1305 ato 1305 f, the gate electrodes 1307, and the like. Then, conductivefilms 1313 electrically connected to the impurity regions 1309 and 1311which form the source and drain regions of the thin film transistors1300 a to 1300 f are formed over the insulating film (see FIG. 18A). Theinsulating film is formed with a single layer or a stacked layer, usingan inorganic material such as silicon oxide or silicon nitride, anorganic material such as polyimide, polyamide, benzocyclobutene,acrylic, or epoxy, a siloxane material, or the like by a CVD method, asputtering method, an SOG method, a droplet discharging method, a screenprinting method, or the like. In this embodiment, the insulating film isformed to have a two-layer structure, and a silicon nitride oxide filmis formed as a first insulating film 1312 a and a silicon oxynitridefilm is fainted as a second insulating film 1312 b. In addition, theconductive films 1313 can form the source and drain electrodes of thethin film transistors 1300 a to 1300 f.

Before the insulating films 1312 a and 1312 b are formed or after one orboth of the insulating films 1312 a and 1312 b is/are formed, heattreatment is preferably conducted for recovery of the crystallinity ofthe semiconductor films, activation of the impurity element which hasbeen added into the semiconductor films, or hydrogenation of thesemiconductor films. As the heat treatment, thermal annealing, laserannealing, RTA, or the like may be applied.

The conductive films 1313 are formed with a single layer or a stackedlayer of an element selected from aluminum (Al), tungsten (W), titanium(Ti), tantalum (Ta), molybdenum (Mo), nickel (Ni), platinum (Pt), copper(Cu), gold (Au), silver (Ag), manganese (Mn), neodymium (Nd), carbon(C), and silicon (Si), or an alloy material or a compound materialcontaining the element as its main component by a CVD method, asputtering method or the like. An alloy material containing aluminum asits main component corresponds to, for example, a material whichcontains aluminum as its main component and also contains nickel, or amaterial which contains aluminum as its main component, and alsocontains nickel and one or both of carbon and silicon. The conductivefilms 1313 are preferably formed to have a stacked structure of abarrier film, an aluminum-silicon (Al—Si) film, and a barrier film or astacked structure of a barrier film, an aluminum silicon (Al—Si) film, atitanium nitride film, and a barrier film. Note that the “barrier film”corresponds to a thin film formed of titanium, titanium nitride,molybdenum, or molybdenum nitride. Aluminum and aluminum silicon aresuitable materials for forming the conductive films 1313 because theyhave low resistance value and are inexpensive. When barrier layers areprovided as the top layer and the bottom layer, generation of hillocksof aluminum or aluminum silicon can be prevented. In addition, when abarrier film formed of titanium which is an element having a highreducing property is formed, even when there is a thin natural oxidefilm formed on the crystalline semiconductor film, the natural oxidefilm can be chemically reduced, and a favorable contact between theconductive film 1313 and the crystalline semiconductor film can beobtained.

Next, an insulating film 1314 is formed so as to cover the conductivefilms 1313, and conductive films 1315 a and 1315 b electricallyconnected to the conductive films 1313 which form the source electrodesor the drain electrodes of the thin film transistors 1300 a and 1300 fare formed over the insulating film 1314. In addition, a conductive film1316 electrically connected to the conductive film 1313 which forms thesource electrode or drain electrode of the thin film transistor 1300 bis formed. It is to be noted that the conductive films 1315 a and 1315 band the conductive film 1316 may be formed using the same material atthe same time. The conductive films 1315 a and 1315 b and the conductivefilm 1316 can be formed using any of the above-described materials forthe conductive film 1313.

Next, a conductive film 1317 functioning as an antenna is formed so asto be electrically connected to the conductive film 1316 (see FIG. 18B).

The insulating film 1314 can be formed with a single layer or a stackedlayer of an insulating film containing oxygen and/or nitrogen such assilicon oxide (SiO_(x)), silicon nitride (SiN_(x)), silicon oxynitride(SiO_(x)N_(y) where x>y>0), or silicon nitride oxide (SiN_(x)O_(y) wherex>y>0); a film containing carbon such as DLC (Diamond-Like Carbon); anorganic material such as epoxy, polyimide, polyamide, polyvinyl phenol,benzocyclobutene, or acrylic; or a siloxane material such as a siloxaneresin by a CVD method, a sputtering method or the like. It is to benoted that a siloxane material corresponds to a material having a bondof Si—O—Si. Siloxane has a skeleton structure with the bond of silicon(Si) and oxygen (O). As a substituent of siloxane, an organic groupcontaining at least hydrogen (e.g., an alkyl group or aromatichydrocarbon) is used. In addition, a fluoro group may be used as thesubstituent. Further, both a fluoro group and an organic groupcontaining at least hydrogen may be used as the substituent.

The conductive film 1317 can be formed of a conductive material by a CVDmethod, a sputtering method, a printing method such as screen printingor gravure printing, a droplet discharging method, a dispenser method, aplating method, or the like. The conductive film 1317 is formed with asingle layer or a stacked layer of an element selected from aluminum(Al), titanium (Ti), silver (Ag), copper (Cu), gold (Au), platinum (Pt),nickel (Ni), palladium (Pd), tantalum (Ta), or molybdenum (Mo), or analloy material or a compound material containing such an element as itsmain component.

For example, when the conductive film 1317 functioning as an antenna isformed by a screen printing method, the conductive film can be providedby selective printing of a conductive paste in which conductiveparticles with a grain diameter of several nm to several tens of urn aredissolved or dispersed in an organic resin. The conductive particles canbe at least one or more of metal particles selected from silver (Ag),gold (Au), copper (Cu), nickel (Ni), platinum (Pt), palladium (Pd),tantalum (Ta), molybdenum (Mo), titanium (Ti), and the like; fineparticles of silver halide; and dispersive nanoparticles of such anelement. In addition, the organic resin included in the conductive pastecan be one or more of organic resins which function as a binder, asolvent, a dispersing agent, and a coating material of the metalparticles. Typically, an organic resin such as an epoxy resin and asilicone resin can be given as examples. Preferably, a conductive pasteis applied and baked to form the conductive film. For example, in thecase of using fine particles (e.g., a grain diameter of 1 to 100 nm)containing silver as its main component as a material of the conductivepaste, the conductive paste is baked and hardened at temperatures of 150to 300° C., so that the conductive film can be obtained. Alternatively,it is also possible to use fine particles containing solder or lead-freesolder as its main component. In that case, fine particles with a graindiameter of less than or equal to 20 μm are preferably used. Solder andlead-free solder have the advantage of low cost.

The conductive films 1315 a and 1315 b can function as wirings which areelectrically connected to a secondary battery included in the radiofield intensity measurement device of the present invention in a laterstep. In addition, in forming the conductive film 1317 which functionsas an antenna, other conductive films may be separately formed so as tobe electrically connected to the conductive films 1315 a and 1315 b, sothat the conductive films can be utilized as the wirings to connect theconductive films 1315 a and 1315 b to the secondary battery.

Next, after forming an insulating film 1318 so as to cover theconductive film 1317, a layer including the thin film transistors 1300 ato 1300 f, the conductive film 1317, and the like (hereinafter referredto as an “element formation layer 1319”) is peeled off the substrate1301. Here, after forming opening portions in the element formationlayer 1319 excluding the region of the thin film transistors 1300 a to1300 f by laser irradiation (e.g., UV light) (see FIG. 18C), the elementformation layer 1319 can be peeled off the substrate 1301 with aphysical force. The peeling layer 1303 may be selectively removed byintroduction of an etchant into the opening portions before peeling theelement formation layer 1319 off the substrate 1301. As the etchant, agas or a liquid containing halogen fluoride or an interhalogen compoundis used. For example, when chlorine trifluoride (ClF₃) is used as thegas containing halogen fluoride, the element formation layer 1319 ispeeled off the substrate 1301. The whole peeling layer 1303 is notremoved but part thereof may be left. Accordingly, the consumption ofthe etchant can be suppressed and process time for removing the peelinglayer can be shortened. In addition, even after removing the peelinglayer 1303, the element formation layer 1319 can be held above thesubstrate 1301. In addition, by reuse of the substrate 1301 from whichthe element formation layer 1319 has been peeled, cost reduction can beachieved.

The insulating film 1318 can be formed with a single layer or a stackedlayer of an insulating film containing oxygen and/or nitrogen such assilicon oxide (SiO_(x)), silicon nitride (SiN_(x)), silicon oxynitride(SiO_(x)N_(y) where x>y>0), or silicon nitride oxide (SiN_(x)O_(y) wherex>y>0); a film containing carbon such as DLC (Diamond-Like Carbon); anorganic material such as epoxy, polyimide, polyamide, polyvinyl phenol,benzocyclobutene, or acrylic; or a siloxane material such as a siloxaneresin by a CVD method, a sputtering method, or the like.

In this embodiment, after forming the opening portions in the elementformation layer 1319 by laser irradiation, a first sheet material 1320is attached to one surface of the element formation layer 1319 (thesurface where the insulating film 1318 is exposed), and then the elementformation layer 1319 is peeled off the substrate 1301 (see FIG. 19A).

Next, a second sheet material 1321 is attached to the other surface ofthe element formation layer 1319 (the surface exposed by peeling),followed by one or both of heat treatment and pressurization treatmentfor attachment of the second sheet material 1321 (see FIG. 19B). As thefirst sheet material 1320 and the second sheet material 1321, a hot-meltfilm or the like can be used.

As the first sheet material 1320 and the second sheet material 1321, afilm on which antistatic treatment for preventing static electricity orthe like has been applied (hereinafter referred to as an antistaticfilm) can be used. As examples of the antistatic film, a film in whichan antistatic material is dispersed in a resin, a film to which anantistatic material is attached, and the like can be given. The filmprovided with an antistatic material can be a film with an antistaticmaterial provided on one of its surfaces, or a film with an antistaticmaterial provided on each of its surfaces. The film with an antistaticmaterial provided on one of its surfaces may be attached to the layer sothat the antistatic material is placed on the inner side of the film orthe outer side of the film. The antistatic material may be provided forthe entire surface of the film, or over a part of the film. As anantistatic material, a metal, indium tin oxide (ITO), or a surfactantsuch as an amphoteric surfactant, a cationic surfactant, or a nonionicsurfactant can be used. Further, as an antistatic material, a resinmaterial which contains a cross-linked copolymer having a carboxyl groupand a quaternary ammonium base on its side chain, or the like can beused. Such a material is attached, mixed, or applied to a film, so thatan antistatic film can be formed. The element formation layer is sealedusing the antistatic film, so that the semiconductor elements can beprotected from adverse effects such as external static electricity whendealt with as a commercial product.

It is to be noted that a thin-film secondary battery is connected to theconductive films 1315 a and 1315 b, so that the battery is formed. Theconnection with the secondary battery may be conducted before theelement formation layer 1319 is peeled off the substrate 1301 (at thestage shown in FIG. 18B or FIG. 18C), after the element formation layer1319 is peeled off the substrate 1301 (at the stage shown in FIG. 19A),or after the element formation layer 1319 is sealed with the first sheetmaterial and the second sheet material (at the stage shown in FIG. 19B).An example where the element formation layer 1319 and the secondarybattery are formed to be connected is explained below with reference toFIGS. 20A and 20B and FIGS. 21A and 21B.

In FIG. 18B, conductive films 1331 a and 1331 b which are electricallyconnected to the conductive films 1315 a and 1315 b, respectively areformed at the same time as the conductive film 1317 which functions asan antenna. Then, the insulating film 1318 is formed so as to cover theconductive films 1317, 1331 a, and 1331 b, followed by formation ofopening portions 1332 a and 1332 b so that the surfaces of theconductive films 1331 a and 1331 b are exposed. After that, the openingportions are formed in the element formation layer 1319 by laserirradiation, and then the first sheet material 1332 is attached to onesurface of the element formation layer 1319 (the surface where theinsulating film 1318 is exposed), so that the element formation layer1319 is peeled off the substrate 1301 (see FIG. 20A).

Next, the second sheet material 1333 is attached to the other surface ofthe element formation layer 1319 (the surface exposed by peeling), andthe element formation layer 1319 is peeled off the first sheet material1332. Therefore, a material with low viscosity is used as the firstsheet material 1332. Then, conductive films 1334 a and 1334 b which areelectrically connected to the conductive films 1331 a and 1331 brespectively through the opening portions 1332 a and 1332 b areselectively formed (see FIG. 20B).

The conductive films 1334 a and 1334 b are formed of a conductivematerial by a CVD method, a sputtering method, a printing method such asscreen printing or gravure printing, a droplet discharging method, adispenser method, a plating method, or the like. The conductive films1334 a and 1334 b are formed with a single layer or a stacked layer ofan element selected from aluminum (Al), titanium (Ti), silver (Ag),copper (Cu), gold (Au), platinum (Pt), nickel (Ni), palladium (Pd),tantalum (Ta), or molybdenum (Mo), or an alloy material or a compoundmaterial containing the element as its main component.

Although the example shown in this embodiment is the case where theconductive films 1334 a and 1334 b are formed after peeling the elementformation layer 1319 off the substrate 1301, the element formation layer1319 may be peeled off the substrate 1301 after the formation of theconductive films 1334 a and 1334 b.

Next, in the case where a plurality of elements is formed over thesubstrate, the element formation layer 1319 is cut into elements (seeFIG. 21A). A laser irradiation apparatus, a dicing apparatus, a scribingapparatus, or the like can be used for the cutting. At this time, theplurality of elements formed over one substrate is separated from oneanother by laser irradiation.

Next, the separated elements are electrically connected to the secondarybattery (see FIG. 21B). In this embodiment, a thin-film secondarybattery is used as the battery, in which a current-collecting thin film,a negative electrode active material layer, a solid electrolyte layer, apositive electrode active material layer, and a current-collecting thinfilm are sequentially stacked.

Conductive films 1336 a and 1336 b are formed of a conductive materialby a CVD method, a sputtering method, a printing method such as screenprinting or gravure printing, a droplet discharging method, a dispensermethod, a plating method, or the like. The conductive films 1336 a and1336 b are formed with a single layer or a stacked layer of an elementselected from aluminum (Al), titanium (Ti), silver (Ag), copper (Cu),gold (Au), platinum (Pt), nickel (Ni), palladium (Pd), tantalum (Ta),and molybdenum (Mo), or an alloy material or a compound materialcontaining such an element as its main component. The conductivematerial should have high adhesion to a negative electrode activematerial layer and also low resistance. In particular, aluminum, copper,nickel, vanadium, or the like is preferably used.

The structure of the thin-film secondary battery is described next. Anegative electrode active material layer 1381 is formed over theconductive film 1336 a. In general, vanadium oxide (V₂O₅) or the like isused. Next, a solid electrolyte layer 1382 is formed over the negativeelectrode active material layer 1381. In general, lithium phosphate(Li₃PO₄) or the like is used. Next, a positive electrode active materiallayer 1383 is formed over the solid electrolyte layer 1382. In general,lithium manganate (LiMn₂O₄) or the like is used. Lithium cobaltate(LiCoO₂) or lithium nickel oxide (LiNiO₂) may also be used. Next, acurrent-collecting thin film 1384 to serve as an electrode is formedover the positive electrode active material layer 1383. Thecurrent-collecting thin film 1384 should have high adhesion to thepositive electrode active material layer 1383 and also low resistance.For example, aluminum, copper, nickel, vanadium, or the like can beused.

Each of the above thin layers of the negative electrode active materiallayer 1381, the solid electrolyte layer 1382, the positive electrodeactive material layer 1383, and the current-collecting thin film 1384may be formed by a sputtering technique or an evaporation technique. Inaddition, the thickness of each layer is preferably 0.1 to 3 μm.

Next, an interlayer film 1385 is formed by application of a resin. Theinterlayer film 1385 is etched to form a contact hole. The interlayerfilm 1385 is not limited to a resin, and other films such as a CVD oxidefilm may be used as well; however, a resin is preferably used in termsof flatness. In addition, the contact hole may be formed without usingetching, but using a photosensitive resin. Next, a wiring layer 1386 isformed over the interlayer film 1385 and connected to the conductivefilm 1336 b. Thus, an electrical connection with the thin-film secondarybattery is secured.

Here, the conductive films 1334 a and 1334 b which are provided in theelement formation layer 1319 are connected to the conductive films 1336a and 1336 b respectively, which serve as the connection terminals ofthe thin film secondary battery 1389, which has been made in advance.Here, an example is shown in which an electrical connection between theconductive films 1334 a and 1336 a or an electrical connection betweenthe conductive films 1334 b and 1336 b is performed by pressure bondingwith an adhesive material such as an anisotropic conductive film (ACF)or an anisotropic conductive paste (ACP) interposed therebetween. Inthis embodiment, the example is shown, in which the connection isperformed using conductive particles 1338 included in an adhesive resin1337. Alternatively, a conductive adhesive such as a silver paste, acopper paste, or a carbon paste; solder joint; or the like can be used.

The structures of such transistors can be various without being limitedto the specific structure shown in this embodiment. For example, amulti-gate structure having two or more gate electrodes may be employed.When a multi-gate structure is employed, a structure in which channelregions are connected in series is provided; therefore, a structure inwhich a plurality of transistors are connected in series is provided.When a multi-gate structure is employed, various advantages can beobtained in that off-current can be reduced; withstand voltage of thetransistor can be increased, so that the reliability is increased; andeven if drain-source voltage changes when the transistor operates in thesaturation region, a drain-source current does not change very much, andthus flat characteristics can be obtained. In addition, a structure inwhich gate electrodes are formed above and below a channel may also beemployed. When a structure in which gate electrodes are formed above andbelow a channel is employed, the channel region is enlarged and theamount of current flowing therethrough can be increased. Thus, adepletion layer can be easily formed and the subthreshold swing (Svalue) can be decreased. When gate electrodes are formed above and belowa channel, a structure in which a plurality of transistors is connectedin parallel is provided.

In addition, any of the following structures may be employed: astructure in which a gate electrode is formed above a channel; astructure in which a gate electrode is formed below a channel; astaggered structure; and an inversely staggered structure.

Further, a structure in which a channel region is divided into aplurality of regions and the divided regions are connected in parallelor in series may be employed. In addition, a channel (or part thereof)may overlap with a source electrode or a drain electrode. However, whena structure in which a channel (or part thereof) overlaps with a sourceelectrode or a drain electrode is employed, electric charges can beprevented from being accumulated in part of the channel and thus anunstable operation can be prevented. In addition, an LDD (Lightly DopedDrain) region may be provided. When an LDD region is provided,off-current can be reduced; the withstand voltage of the transistor canbe increased, so that the reliability is increased; and even ifdrain-source voltage changes when the transistor operates in thesaturation region, drain-source current does not change very much, andthus flat characteristics can be obtained.

The method of manufacturing the radio field intensity measurement devicein this embodiment can be applied to any of the radio field intensitymeasurement devices in the other embodiments.

Embodiment 2

Embodiment 2 will describe an example of a method for manufacturing theradio field intensity measurement device described in the aboveembodiment modes, with reference to drawings. In this embodiment, astructure in which an antenna and a signal processing circuit of theradio field intensity measurement device are formed over the samesubstrate will be explained. It is to be noted that an antenna and asignal processing circuit are formed using transistors including channelformation regions formed on a single crystal substrate, together overthe same single crystal substrate. When transistors formed using asingle crystal substrate are used as the transistors, a radio fieldintensity measurement device having transistors with few characteristicvariations can be formed, which is preferable. In addition, in thisembodiment, an example is explained in which the thin-film secondarybattery described in Embodiment 1 is used as the battery included in thesignal processing circuit.

First, separated regions 2304 and 2306 (hereinafter simply referred toas regions 2304 and 2306) are formed in a semiconductor substrate 2300(see FIG. 22A). The regions 2304 and 2306 provided in the semiconductorsubstrate 2300 are separated from each other by an insulating film (alsoreferred to as a field oxide film) 2302. The example shown here is thecase where a single crystal Si substrate having n-type conductivity isused as the semiconductor substrate 2300, and a p well 2307 is formed inthe region 2306 of the semiconductor substrate 2300.

Any substrate can be used as the substrate 2300 as long as it is asemiconductor substrate. For example, a single crystal Si substratehaving n-type or p-type conductivity, a compound semiconductor substrate(e.g., a GaAs substrate, an InP substrate, a GaN substrate, a SiCsubstrate, a sapphire substrate, or a ZnSe substrate), an SOI (Siliconon Insulator) substrate formed by a bonding method or a SIMOX(Separation by IMplanted OXygen) method, or the like can be used.

The regions 2304 and 2306 can be formed by a LOCOS (LOCal Oxidation ofSilicon) method, a trench isolation method, or the like.

In addition, the p well 2307 formed in the region 2306 of thesemiconductor substrate 2300 can be formed by selective doping of thesemiconductor substrate 2300 with a p-type impurity element. As a p-typeimpurity element, boron (B), aluminum (Al), gallium (Ga), or the likecan be used.

In this embodiment, although the region 2304 is not doped with animpurity element because an n-type semiconductor substrate is used asthe semiconductor substrate 2300, an n well may be formed in the region2304 by introduction of an n-type impurity element. As an n-typeimpurity element, phosphorus (P), arsenic (As), or the like can be used.When a p-type semiconductor substrate is used, on the other hand, theregion 2304 may be doped with an n-type impurity element to form an nwell, whereas the region 2306 may not be doped with an impurity element.

Next, insulating films 2332 and 2334 are formed so as to cover theregions 2304 and 2306, respectively (see FIG. 22B).

For example, surfaces of the regions 2304 and 2306 provided in thesemiconductor substrate 2300 are oxidized by heat treatment, so that theinsulating films 2332 and 2334 can be formed of silicon oxide films.Alternatively, the insulating films 2332 and 2334 may be formed to havea stacked structure of a silicon oxide film and a film containing oxygenand nitrogen (a silicon oxynitride film) by the steps of forming asilicon oxide film by a thermal oxidation method and then nitriding thesurface of the silicon oxide film by nitridation treatment.

Further alternatively, the insulating films 2332 and 2334 can be formedby plasma treatment as described above. For example, the insulatingfilms 2332 and 2334 can be formed using a silicon oxide (SiO_(x)) filmor a silicon nitride (SiN_(x)) film which is obtained by application ofhigh-density plasma oxidation or high-density plasma nitridationtreatment to the surfaces of the regions 2304 and 2306 provided in thesemiconductor substrate 2300. Furthermore, after applying high-densityplasma oxidation treatment to the surfaces of the regions 2304 and 2306,high-density plasma nitridation treatment may be performed. In thatcase, silicon oxide films are formed on the surfaces of the regions 2304and 2306, and then silicon oxynitride films are formed on the siliconoxide films Thus, the insulating films 2332 and 2334 are each formed tohave a stacked structure of the silicon oxide film and the siliconoxynitride film. In addition, high-density plasma oxidation orhigh-density nitridation treatment may be applied to the silicon oxidefilms after silicon oxide films are formed on the surfaces of theregions 2304 and 2306 by a thermal oxidation method.

The insulating films 2332 and 2334 formed over the regions 2304 and 2306of the semiconductor substrate 2300 respectively function as the gateinsulating films of transistors which are completed later.

Next, a conductive film is formed so as to cover the insulating films2332 and 2334 which are formed over the regions 2304 and 2306,respectively (see FIG. 22C). Here, an example is shown in whichconductive films 2336 and 2338 are sequentially stacked as theconductive film. Needless to say, the conductive film may be formed tohave a single layer or a stacked structure of three or more layers.

As materials of the conductive films 2336 and 2338, an element selectedfrom tantalum (Ta), tungsten (W), titanium (Ti), molybdenum (Mo),aluminum (Al), copper (Cu), chromium (Cr), niobium (Nb), or the like, oran alloy material or a compound material containing such an element asits main component can be used. Alternatively, a metal nitride filmobtained by nitridation of the above element can be used. Besides, asemiconductor material typified by polycrystalline silicon doped with animpurity element such as phosphorus can be used.

In this case, a stacked structure is employed in which the conductivefilm 2336 is formed using tantalum nitride and the conductive film 2338is formed thereover using tungsten. Alternatively, it is also possibleto form the conductive film 2336 using a single-layer film or a stackedfilm of tungsten nitride, molybdenum nitride, and/or titanium nitrideand form the conductive film 2338 using a single-layer film or a stackedfilm of tantalum, molybdenum, and/or titanium.

Next, the stacked conductive films 2336 and 2338 are selectively removedby etching, so that the conductive films 2336 and 2338 remain above partof the regions 2304 and 2306, respectively. Thus, gate electrodes 2340and 2342 are formed (see FIG. 23A).

Next, a resist mask 2348 is selectively formed so as to cover the region2304, and the region 2306 is doped with an impurity element, using theresist mask 2348 and the gate electrode 2342 as masks, so that impurityregions are formed (see FIG. 23B). As an impurity element, an n-typeimpurity element or a p-type impurity element is used. As an n-typeimpurity element, phosphorus (P), arsenic (As), or the like can be used.As a p-type impurity element, boron (B), aluminum (Al), gallium (Ga), orthe like can be used. Here, phosphorus (P) is used as the impurityelement.

In FIG. 23B, by introduction of an impurity element, impurity regions2352 which form source and drain regions and a channel formation region2350 are formed in the region 2306.

Next, a resist mask 2366 is selectively formed so as to cover the region2306, and the region 2304 is doped with an impurity element, using theresist mask 2366 and the gate electrode 2340 as masks, so that impurityregions are formed (see FIG. 23C). As the impurity element, an n-typeimpurity element or a p-type impurity element is used. As an n-typeimpurity element, phosphorus (P), arsenic (As), or the like can be used.As a p-type impurity element, boron (B), aluminum (Al), gallium (Ga), orthe like can be used. At this time, an impurity element (e.g., boron(B)) of a conductivity type different from that of the impurity elementintroduced into the region 2306 in FIG. 23B is used. As a result,impurity regions 2370 which form source and drain regions and a channelformation region 2368 are formed in the region 2304.

Next, a second insulating film 2372 is formed so as to cover theinsulating films 2332 and 2334 and the gate electrodes 2340 and 2342.Then, wirings 2374, which are electrically connected to the impurityregions 2352 and 2370 formed in the regions 2306 and 2304 respectively,are formed over the second insulating film 2372 (see FIG. 24A).

The second insulating film 2372 can be formed with a single layer or astacked layer of an insulating film containing oxygen and/or nitrogensuch as silicon oxide (SiO_(x)), silicon nitride (SiN_(x)), siliconoxynitride (SiO_(x)N_(y) where x>y>0), or silicon nitride oxide(SiN_(x)O_(y) where x>y>0); a film containing carbon such as DLC(Diamond-Like Carbon); an organic material such as epoxy, polyimide,polyamide, polyvinyl phenol, benzocyclobutene, or acrylic; or a siloxanematerial such as a siloxane resin by a CVD method, a sputtering methodor the like. A siloxane material corresponds to a material having a bondof Si—O—Si. Siloxane has a skeleton structure with the bond of silicon(Si) and oxygen (O). As a substituent of siloxane, an organic groupcontaining at least hydrogen (e.g., an alkyl group or aromatichydrocarbon) is used. Also, a fluoro group may be used as thesubstituent, or both a fluoro group and an organic group containing atleast hydrogen may be used.

The wirings 2374 are formed with a single layer or a stacked layer of anelement selected from aluminum (Al), tungsten (W), titanium (Ti),tantalum (Ta), molybdenum (Mo), nickel (Ni), platinum (Pt), copper (Cu),gold (Au), silver (Ag), manganese (Mn), neodymium (Nd), carbon (C), orsilicon (Si), or an alloy material or a compound material containingsuch an element as its main component by a CVD method, a sputteringmethod or the like. An alloy material containing aluminum as its maincomponent corresponds to, for example, a material which containsaluminum as its main component and also contains nickel, or a materialwhich contains aluminum as its main component and also contains nickeland one or both of carbon and silicon. The wirings 2374 are preferablyformed to have a stacked structure of a barrier film, analuminum-silicon (Al—Si) film, and a barrier film or a stacked structureof a barrier film, an aluminum silicon (Al—Si) film, a titanium nitridefilm, and a barrier film. It is to be noted that the “barrier film”corresponds to a thin film formed of titanium, titanium nitride,molybdenum, or molybdenum nitride. Aluminum and aluminum silicon aresuitable materials for forming the wirings 2374 because they have highresistance values and are inexpensive. When barrier layers are providedas the top layer and the bottom layer, generation of hillocks ofaluminum or aluminum silicon can be prevented. When a barrier filmformed of titanium which is an element having a high reducing propertyis formed, even when there is a thin natural oxide film formed on thecrystalline semiconductor film, the natural oxide film can be chemicallyreduced, and a favorable contact between the wirings 2374 and thecrystalline semiconductor film can be obtained.

It is to be noted that the structure of transistors of the presentinvention is not limited to the one shown in the drawing. For example, atransistor with an inversely staggered structure, a FinFET structure, orthe like can be used. A FinFET structure is preferable because it cansuppress a short channel effect which occurs along with reduction intransistor size.

The radio field intensity measurement device of the present inventionincludes a battery by which power can be stored in the signal processingcircuit. As the battery, a capacitor such as an electric double layercapacitor or a thin-film secondary battery is preferably used. In thisembodiment, a connection between the transistor formed in thisembodiment and a thin-film secondary battery is explained.

In this embodiment, the secondary battery is stacked over the wiring2374 connected to the transistor. The secondary battery has a structurein which a current-collecting thin film, a negative electrode activematerial layer, a solid electrolyte layer, a positive electrode activematerial layer, and a current-collecting thin film are sequentiallystacked (see FIG. 24B). Therefore, the material of the wiring 2374 whichalso has a function of the current-collecting thin film of the secondarybattery should have high adhesion to the negative electrode activematerial layer and also low resistance. In particular, aluminum, copper,nickel, vanadium, or the like is preferably used.

Subsequently, the structure of the thin-film secondary battery isdescribed. A negative electrode active material layer 2391 is formedover the wiring 2374. In general, vanadium oxide (V₂O₅) or the like isused. Next, a solid electrolyte layer 2392 is formed over the negativeelectrode active material layer 2391. In general, lithium phosphate(Li₃PO₄) or the like is used. Next, a positive electrode active materiallayer 2393 is formed over the solid electrolyte layer 2392. In general,lithium manganate (LiMn₂O₄) or the like is used. Lithium cobaltate(LiCoO₂) or lithium nickel oxide (LiNiO₂) may also be used. Next, acurrent-collecting thin film 2394 to serve as an electrode is formedover the positive electrode active material layer 2393. Thecurrent-collecting thin film 2394 should have high adhesion to thepositive electrode active material layer 2393 and also low resistance.For example, aluminum, copper, nickel, vanadium, or the like can beused.

Each of the above-described thin layers of the negative electrode activematerial layer 2391, the solid electrolyte layer 2392, the positiveelectrode active material layer 2393, and the current-collecting thinfilm 2394 may be formed by a sputtering technique or an evaporationtechnique. In addition, the thickness of each layer is preferably 0.1 to3 μm.

Next, an interlayer film 2396 is formed by application of a resin. Theinterlayer film 2396 is etched to form a contact hole. The interlayerfilm is not limited to a resin, and other films such as a CVD oxide filmmay also be used; however, a resin is preferably used in terms offlatness. In addition, the contact hole may be formed without etching,but using a photosensitive resin. Next, a wiring layer 2395 is formedover the interlayer film 2396 and connected to a wiring 2397. Thus, anelectrical connection between the secondary battery and the transistoris secured.

With the above-described structure, the radio field intensitymeasurement device of the present invention can have a structure inwhich transistors are formed on a single crystal substrate and athin-film secondary battery is formed thereover. Thus, the radio fieldintensity measurement device of the present invention can achieveflexibility as well as thinning and reduction in size.

The method of manufacturing the radio field intensity measurement devicein this embodiment can be applied to any of the radio field intensitymeasurement devices in the other embodiments.

Embodiment 3

An example of a method for manufacturing a radio field intensitymeasurement device, which is different from that described in Embodiment2, will be explained with reference to drawings.

First, an insulating film is formed over a substrate 2600. Here, asingle crystal Si substrate having n-type conductivity is used as thesubstrate 2600, and insulating films 2602 and 2604 are formed over thesubstrate 2600 (see FIG. 25A). For example, silicon oxide (SiO_(x)) isformed as the insulating film 2602 by application of heat treatment tothe substrate 2600, and then silicon nitride (SiN_(x)) is formed overthe insulating film 2602 by a CVD method.

Any substrate can be used as the substrate 2600 as long as it is asemiconductor substrate, without particular limitations. For example, asingle crystal Si substrate having n-type or p-type conductivity, acompound semiconductor substrate (e.g., a GaAs substrate, an InPsubstrate, a GaN substrate, a SiC substrate, a sapphire substrate, or aZnSe substrate), an SOI (Silicon on Insulator) substrate fanned by abonding method or a SIMOX (Separation by IMplanted OXygen) method, orthe like can be used.

Alternatively, after forming the insulating film 2602, the insulatingfilm 2604 may be formed by nitridation of the insulating film 2602 byhigh-density plasma treatment. It is to be noted that the insulatingfilm provided over the substrate 2600 may have a single-layer structureor a stacked structure of three or more layers.

Next, patterns of a resist mask 2606 are selectively formed over theinsulating film 2604, and selective etching is performed using theresist mask 2606 as a mask, so that recessed portions 2608 areselectively formed in the substrate 2600 (see FIG. 25B). For the etchingof the substrate 2600 and the insulating films 2602 and 2604, plasma dryetching can be conducted.

Next, the patterns of the resist mask 2606 are removed, and then aninsulating film 2610 is formed so as to fill the recessed portions 2608formed in the substrate 2600 (see FIG. 25C).

The insulating film 2610 is formed of an insulating material such assilicon oxide, silicon nitride, silicon oxynitride (SiO_(x)N_(y), wherex>y>0), or silicon nitride oxide (SiN_(x)O_(y), where x>y>0) by a CVDmethod, a sputtering method, or the like. As the insulating film 2610, asilicon oxide film is formed by an atmospheric pressure CVD method or alow-pressure CVD method using a TEOS (tetraethyl orthosilicate) gas.

Next, the surface of the substrate 2600 is exposed by grinding treatmentor polishing treatment such as CMP (Chemical Mechanical Polishing).Here, by exposure of the surface of the substrate 2600, regions 2612 and2613 are formed between insulating films 2611 which are formed in therecessed portions 2608 of the substrate 2600. The insulating film 2610formed over the surface of the substrate 2600 is removed by grindingtreatment or polishing treatment such as CMP, so that the insulatingfilms 2611 are obtained. Subsequently, by selective introduction of ap-type impurity element, a p well 2615 is formed in the region 2613 ofthe substrate 2600 (see FIG. 26A).

As a p-type impurity element, boron (B), aluminum (Al), gallium (Ga), orthe like can be used. In this case, boron (B) is introduced into theregion 2613 as the impurity element.

Further, in this embodiment, although the region 2612 is not doped withan impurity element because an n-type semiconductor substrate is used asthe substrate 2600, an n well may be formed in the region 2612 byintroduction of an n-type impurity element. As an n-type impurityelement, phosphorus (P), arsenic (As), or the like can be used.

When a p-type semiconductor substrate is used, on the other hand, theregion 2612 may be doped with an n-type impurity element to form an nwell, whereas the region 2613 may not be doped with an impurity element.

Next, insulating films 2632 and 2634 are formed over the surfaces of theregions 2612 and 2613 in the substrate 2600, respectively (see FIG.26B).

For example, surfaces of the regions 2612 and 2613 provided in thesubstrate 2600 are oxidized by heat treatment, so that the insulatingfilms 2632 and 2634 of silicon oxide films can be formed. Alternatively,the insulating films 2632 and 2634 may each be formed to have a stackedstructure of a silicon oxide film and a film containing oxygen andnitrogen (a silicon oxynitride film) by the steps of forming a siliconoxide film by a thermal oxidation method and then nitriding the surfaceof the silicon oxide film by nitridation treatment.

Further alternatively, the insulating films 2632 and 2634 may be formedby plasma treatment as described above. For example, the insulatingfilms 2632 and 2634 can be formed with a silicon oxide (SiO_(x)) film ora silicon nitride (SiN_(x)) film which is obtained by application ofhigh-density plasma oxidation or high-density nitridation treatment tothe surfaces of the regions 2612 and 2613 provided in the substrate2600. In addition, after application of high-density plasma oxidationtreatment to the surfaces of the regions 2612 and 2613, high-densityplasma nitridation treatment may be conducted. In that case, siliconoxide films are formed on the surfaces of the regions 2612 and 2613 andthen silicon oxynitride films are formed on the silicon oxide films.Thus, the insulating films 2632 and 2634 are each formed to have astacked structure of the silicon oxide film and the silicon oxynitridefilm. In addition, silicon oxide films are formed on the surfaces of theregions 2612 and 2613 by a thermal oxidation method, and thenhigh-density plasma oxidation treatment or high-density plasmanitridation treatment may be performed to the silicon oxide films.

It is to be noted that the insulating films 2632 and 2634 formed overthe regions 2612 and 2613 of the substrate 2600 respectively function asthe gate insulating films of transistors which are completed later.

Next, a conductive film is formed so as to cover the insulating films2632 and 2634 which are formed over the regions 2612 and 2613 providedin the substrate 2600, respectively (see FIG. 26C). In this embodiment,an example is shown where conductive films 2636 and 2638 aresequentially stacked as the conductive film. Needless to say, theconductive film may be formed to have a single layer or a stackedstructure of three or more layers.

As a material of the conductive films 2636 and 2638, an element selectedfrom tantalum (Ta), tungsten (W), titanium (Ti), molybdenum (Mo),aluminum (Al), copper (Cu), chromium (Cr), niobium (Nb), or the like, oran alloy material or a compound material containing such an element asits main component can be used. Alternatively, a metal nitride filmobtained by nitridation of such an element can also be used.Furthermore, a semiconductor material typified by polycrystallinesilicon doped with an impurity element such as phosphorus can also beused.

In this case, a stacked structure is employed in which the conductivefilm 2636 is formed using tantalum nitride and the conductive film 2638is formed thereover using tungsten. Alternatively, it is also possibleto form the conductive film 2636 using a single-layer film or a stackedfilm of tantalum nitride, tungsten nitride, molybdenum nitride, and/ortitanium nitride and form the conductive film 2638 using a single-layerfilm or a stacked film of tungsten, tantalum, molybdenum, and/ortitanium.

Next, the stacked conductive films 2636 and 2638 are selectively removedby etching, so that the conductive films 2636 and 2638 remain above partof the regions 2612 and 2613 of the substrate 2600. Thus, conductivefilms 2640 and 2642 functioning as gate electrodes are formed (see FIG.27A). Here, surfaces of the regions 2612 and 2613 of the substrate 2600which does not overlap with the conductive films 2640 and 2642respectively are exposed.

Specifically, in the region 2612 of the substrate 2600, a part of theinsulating film 2632 formed below the conductive film 2640, which doesnot overlap with the conductive film 2640, is selectively removed, sothat the ends of the conductive film 2640 and the ends of the insulatingfilm 2632 are almost aligned with each other. In addition, in the region2613 of the substrate 2600, a part of the insulating film 2634 formedbelow the conductive film 2642, which do not overlap with the conductivefilm 2642, is selectively removed, so that the ends of the conductivefilm 2642 and the ends of the insulating film 2634 are almost alignedwith each other.

In this case, the part of the insulating films or the like which do notoverlap with the conductive films 2640 and 2642 may be removed at thesame time as the formation of the conductive films 2640 and 2642.Alternatively, the part of the insulating films which do not overlapwith the conductive films 2640 and 2642 may be removed using resistmasks which are left after the formation of the conductive films 2640and 2642 or the conductive films 2640 and 2642 as masks.

Then, the regions 2612 and 2613 of the substrate 2600 are selectivelydoped with an impurity element (see FIG. 27B). At this time, the region2613 is selectively doped with an n-type impurity element at lowconcentration, using the conductive film 2642 as a mask, whereas theregion 2612 is selectively doped with a p-type impurity element at lowconcentration, using the conductive film 2640 as a mask. As an n-typeimpurity element, phosphorus (P), arsenic (As), or the like can be used.As a p-type impurity element, boron (B), aluminum (Al), gallium (Ga), orthe like can be used.

Next, sidewalls 2654 which are in contact with the side surfaces of theconductive films 2640 and 2642 are formed. Specifically, the sidewallsare formed with a single layer or a stacked layer of a film containingan inorganic material such as silicon, silicon oxide, or siliconnitride, or a film containing an organic material such as an organicresin. Then, such an insulating film is selectively etched byanisotropic etching mainly in the perpendicular direction, so that thesidewalls 2654 can be formed so as to be in contact with the sidesurfaces of the conductive films 2640 and 2642. The sidewalls 2654 areused as masks in doping for forming LDD (Lightly Doped Drain) regions.In addition, the sidewalls 2654 are formed to be in contact with sidesurfaces of the insulating films formed below the conductive films 2640and 2642.

Next, the regions 2612 and 2613 of the substrate 2600 are doped with animpurity element, using the sidewalls 2654 and the conductive films 2640and 2642 as masks, so that impurity regions which function as source anddrain regions are formed (see FIG. 27C). At this time, the region 2613of the substrate 2600 is doped with an n-type impurity element at highconcentration, using the sidewalls 2654 and the conductive film 2642 asmasks, whereas the region 2612 is doped with a p-type impurity elementat high concentration, using the sidewalls 2654 and the conductive film2640 as masks.

As a result, impurity regions 2658 which form source and drain regions,low concentration impurity regions 2660 which form LDD regions, and achannel formation region 2656 are formed in the region 2612 of thesubstrate 2600. Meanwhile, impurity regions 2664 which form source anddrain regions, low concentration impurity regions 2666 which form LDDregions, and a channel formation region 2662 are formed in the region2613 of the substrate 2600.

In this embodiment, the impurity elements are introduced under thecondition that parts of the regions 2612 and 2613 of the substrate 2600which do not overlap with the conductive films 2640 and 2642 areexposed. Accordingly, the channel formation regions 2656 and 2662 whichare formed in the regions 2612 and 2613 of the substrate 2600respectively can be formed in a self-aligned manner, due to theconductive films 2640 and 2642.

Next, a second insulating film 2677 is formed so as to cover theinsulating films, the conductive films, and the like which are providedover the regions 2612 and 2613 of the substrate 2600, and openingportions 2678 are formed in the second insulating film 2677 (see FIG.28A).

The second insulating film 2677 can be formed with a single layer or astacked layer of an insulating film containing oxygen and/or nitrogensuch as silicon oxide (SiO_(x)), silicon nitride (SiN_(x)), siliconoxynitride (SiO_(x)N_(y) where x>y>0), or silicon nitride oxide(SiN_(x)O_(y) where x>y>0); a film containing carbon such as DLC(Diamond-Like Carbon); an organic material such as epoxy, polyimide,polyamide, polyvinyl phenol, benzocyclobutene, or acrylic; or a siloxanematerial such as a siloxane resin, by a CVD method, a sputtering methodor the like. A siloxane material corresponds to a material having a bondof Si—O—Si. Siloxane has a skeleton structure with the bond of silicon(Si) and oxygen (O). As a substituent of siloxane, an organic groupcontaining at least hydrogen (e.g., an alkyl group or aromatichydrocarbon) is used. In addition, a fluoro group may be used as thesubstituent. Further, a fluoro group and an organic group containing atleast hydrogen may be used as the substituent.

Next, conductive films 2680 are formed in the opening portions 2678 by aCVD method. Then, conductive films 2682 a to 2682 d are selectivelyformed over the insulating film 2677 so as to be electrically connectedto the conductive films 2680 (see FIG. 28B).

The conductive films 2680 and 2682 a to 2682 d are formed with a singlelayer or a stacked layer of an element selected from aluminum (Al),tungsten (W), titanium (Ti), tantalum (Ta), molybdenum (Mo), nickel(Ni), platinum (Pt), copper (Cu), gold (Au), silver (Ag), manganese(Mn), neodymium (Nd), carbon (C), or silicon (Si), or an alloy materialor a compound material containing such an element as its main componentby a CVD method, a sputtering method or the like. An alloy materialcontaining aluminum as its main component corresponds to, for example, amaterial which contains aluminum as its main component and also containsnickel, or a material which contains aluminum as its main component andalso contains nickel and one or both of carbon and silicon. For example,each of the conductive films 2680 and 2682 a to 2682 d is preferablyformed to have a stacked structure of a barrier film, analuminum-silicon (Al—Si) film, and a barrier film or a stacked structureof a barrier film, an aluminum silicon (Al—Si) film, a titanium nitridefilm, and a barrier film. It is to be noted that the “barrier film”corresponds to a thin film formed of titanium, titanium nitride,molybdenum, or molybdenum nitride. Aluminum and aluminum silicon aresuitable materials for forming the conductive films 2680 and 2682 a to2682 d because they have high resistance values and are inexpensive.When barrier layers are provided as the top layer and the bottom layer,generation of hillocks of aluminum or aluminum silicon can be prevented.When a barrier film formed of titanium which is an element having a highreducing property is formed, even when there is a thin natural oxidefilm formed on the crystalline semiconductor film, the natural oxidefilm can be chemically reduced, and a favorable contact between theconductive film 2680 and 2682 a to 2682 d, and the crystallinesemiconductor film can be obtained. Here, the conductive films 2680 and2682 a to 2682 d can be formed by selective growth of tungsten (W) by aCVD method.

Through the above steps, a p-channel transistor formed in the region2612 of the substrate 2600 and an n-channel transistor formed in theregion 2613 of the substrate 2600 can be obtained.

It is to be noted that the structure of transistors constituting theradio field intensity measurement device of the present invention is notlimited to the one shown in the drawings. For example, a transistor withan inversely staggered structure, a FinFET structure, or the like can beused. A FinFET structure is preferable because it can suppress a shortchannel effect which occurs along with reduction in transistor size.

The radio field intensity measurement device of the present invention isprovided with a battery by which power can be stored in the signalprocessing circuit. As the battery, a capacitor such as an electricdouble layer capacitor or a thin-film secondary battery is preferablyused. In this embodiment, a connection between the transistor formed inthis embodiment and a thin-film secondary battery will be described.

In this embodiment, a secondary battery is stacked over the conductivefilm 2682 d connected to the transistor. The secondary battery has astructure in which a current-collecting thin film, a negative electrodeactive material layer, a solid electrolyte layer, a positive electrodeactive material layer, and a current-collecting thin film aresequentially stacked (see FIG. 28B). Therefore, the material of theconductive film 2682 d which is also used as the material of thecurrent-collecting thin film of the secondary battery preferably hashigh adhesion to the negative electrode active material layer and alsolow resistance. In particular, aluminum, copper, nickel, vanadium, orthe like is preferably used.

Subsequently, the structure of the thin-film secondary battery isdescribed. A negative electrode active material layer 2691 is formedover the conductive film 2682 d. In general, vanadium oxide (V₂O₅) orthe like is used. Next, a solid electrolyte layer 2692 is formed overthe negative electrode active material layer 2691. In general, lithiumphosphate (Li₃PO₄) or the like is used. Next, a positive electrodeactive material layer 2693 is formed over the solid electrolyte layer2692. In general, lithium manganate (LiMn₂O₄) or the like is used.Lithium cobaltate (LiCoO₂) or lithium nickel oxide (LiNiO₂) can also beused. Next, a current-collecting thin film 2694 to serve as an electrodeis formed over the positive electrode active material layer 2693. Thecurrent-collecting thin film 2694 should have high adhesion to thepositive electrode active material layer 2693 and also low resistance.For example, aluminum, copper, nickel, vanadium, or the like can beused.

Each of the above-described thin layers of the negative electrode activematerial layer 2691, the solid electrolyte layer 2692, the positiveelectrode active material layer 2693, and the current-collecting thinfilm 2694 may be formed by a sputtering technique or an evaporationtechnique. In addition, the thickness of each layer is preferably 0.1 to3 μm.

Next, an interlayer film 2696 is formed by application of a resin. Theinterlayer film 2696 is etched to form a contact hole. The interlayerfilm 2696 is not limited to a resin, and other films such as a CVD oxidefilm may also be used; however, a resin is preferably used in terms offlatness. In addition, the contact hole may be formed without etching,but using a photosensitive resin. Next, a wiring layer 2695 is formedover the interlayer film 2696 and is connected to a wiring 2697. Thus,an electrical connection between the thin-film secondary battery and thetransistor is obtained by the connection with the wiring 2697.

With the above-described structure, the radio field intensitymeasurement device of the present invention can have a structure inwhich transistors are formed on a single crystal substrate and athin-film secondary battery is formed thereover. Thus, the radio fieldintensity measurement device of the present invention can achieveflexibility as well as thinning and reduction in size.

The method of manufacturing the radio field intensity measurement devicein this embodiment can be applied to any of the radio field intensitymeasurement devices in the other embodiments.

Embodiment 4

Embodiment 4 will describe applications of the radio field intensitymeasurement device of the present invention. The radio field intensitymeasurement device of the present invention can protect an object whichmay malfunction due to a radiowave of medical equipment, pace makers orthe like, and can visibly informs us that the intensity of the radiowavearound the object is high. Thus the radio field intensity measurementdevice of the present invention can be used as a so-called radio fieldintensity detector.

In this embodiment, with reference to FIGS. 29A to 36B, applicationexamples of the present invention and examples of products in theapplication examples are described.

FIG. 29A illustrates an example of a completed radio field intensitydetector according the present invention. A radio field intensitymeasurement device 3001 is formed on a checking badge 3000. On thechecking badge 3000, an ID 3002 and a photograph 3003 of an operatorwearing the checking badge is attached. The checking badge 3000 likethis, as illustrated in FIG. 29B, is attached on work clothes 3004 ofthe operator. The operator has the radio field intensity detector andconfirms color changed of the radio field intensity measurement device3001, when the operator enters an area with extremely intense radiowave.At this time, the operator can know the intensity of radiowave. Theradio field intensity measurement device of the present invention canmeasure a weak radiowave from a long distance, and has excellentvisibility even when brightness in surroundings is intense e.g., undersunlight. Therefore, in the radio field intensity detector of FIG. 29A,the operator can measure a weak radiowave from a long distance and cansee the measured result with excellent visibility even when brightnessin surroundings is intense e.g., under sunlight.

FIG. 30A illustrates an example of a completed radio field intensitydetector according to the present invention. On a seal 3100, a warningmark 3101 to warn someone not to use a device sending a radiowave and aradio field intensity measurement device 3102 are formed. The seal 3100like this is attached to a medical device 3103 in a hospital asillustrated in FIG. 30B for example. When a visitor or a hospitalpatient comes near the radio field intensity measurement device 3102,having a device sending a radiowave whose power is not switched off, thecolor of the radio field intensity measurement device 3102 is changed tosend a visible warning and tell the visitor or the hospital patient toswitch off the device sending radiowave. The radio field intensitymeasurement device of the present invention can measure a weak radiowavefrom a long distance, and has excellent visibility even when brightnessin surroundings is intense e.g., under sunlight. Therefore, in the radiofield intensity detector of FIG. 30A, a visitor or a hospital patientcan measure a weak radiowave from a long distance and can see themeasured result with excellent visibility even when brightness insurroundings is intense e.g., under sunlight.

FIG. 31A illustrates an example of a completed radio field intensitydetector according to the present invention. On a seal 3200, a warningmark 3201 to warn someone not to use a cellular phone and a radio fieldintensity measurement device 3202 are formed. The seal 3200 like this isattached to a strap 3203 near priority seating in a train as illustratedin FIG. 31B for example. When a passenger has a cellular phone whosepower is not switched off and an antenna 3205 of the cellular phone 3204sends radiowave, the color of the radio field intensity measurementdevice 3202 is changed due to a radiowave to visibly warn the passengerto switch off the cellular phone. In addition, someone has or wear anobject which may malfunction due to radiowave, such as a pace maker,he/she can sense a risk of the malfunction by seeing the color of theradio field intensity measurement device, and he/she can leave thesource of radiowave. The radio field intensity measurement device of thepresent invention can measure a weak radiowave from a long distance, andhas excellent visibility even when brightness in surroundings is intensee.g., under sunlight. Therefore, in the radio field intensity detectorof FIG. 31A, a passenger can measure a weak radiowave from a longdistance and can see the measured result with excellent visibility evenwhen brightness in surroundings is intense e.g., under sunlight.

FIG. 32A illustrates an example of a completed radio field intensitydetector according to the present invention. On a warning light 3300, awarning mark 3301 incorporating the radio field intensity measurementdevice of the present invention is formed. The warning light like thisis used in an airplane 3302 as illustrated in FIG. 32B for example.Specifically, as illustrated in FIG. 32C, the warning light 3300 isinstalled above seats 3303. When an airplane takes off, a flightattendant confirms the warning light. If a source emitting a radiowaveis around, the flight attendant warns passengers to switch off thesource. The radio field intensity measurement device of the presentinvention can measure a weak radiowave from a long distance, and hasexcellent visibility even when brightness in surroundings is intensee.g., under sunlight. Therefore, in the radio field intensity detectorof FIG. 32A, a flight attendant can measure a weak radiowave from a longdistance and can see the measured result with excellent visibility evenwhen brightness in surroundings is intense e.g., under sunlight, so thatthe radio field intensity detector works as a security device in thepublic vehicle.

FIG. 33A illustrates an example of a completed radio field intensitydetector according to the present invention. On a warning light 3400, awarning mark 3401 incorporating the radio field intensity measurementdevice of the present invention is formed. The warning light like thisis incorporated in an electromagnetic cooker (or an induction heating(IH) cooker) 3402 as illustrated in FIG. 33B for example. When theelectromagnetic cooker is broken and emits dangerous electromagneticwave around, the color of the warning light is changed to notify danger.The radio field intensity measurement device of the present inventioncan measure a weak radiowave from a long distance, and has excellentvisibility even when brightness in surroundings is intense e.g., undersunlight. Therefore, in the radio field intensity detector of FIG. 33A,a user can measure a weak radiowave from a long distance and can see themeasured result with excellent visibility even when brightness insurroundings is intense e.g., under sunlight.

FIG. 34A illustrates an example of a completed radio field intensitydetector according to the present invention. On a display portion 3405,a warning mark 3406 incorporating the radio field intensity measurementdevice of the present invention is formed. The display portion like thisis incorporated in a microwave oven 3407 as illustrated in FIG. 34B forexample. When the microwave oven 3407 is broken and emits dangerouselectromagnetic wave around, the color of the warning light is changedto notify danger. The radio field intensity measurement device of thepresent invention can measure a weak radiowave from a long distance, andhas excellent visibility even when brightness in surroundings is intensee.g., under sunlight. Therefore, in the radio field intensity detectorof FIG. 34A, a user can measure a weak radiowave from a long distanceand can see the measured result with excellent visibility even whenbrightness in surroundings is intense e.g., under sunlight.

FIG. 35A is an example of a completed radio field intensity detectoraccording to the present invention. On a seal 3500, a radio fieldintensity measurement device 3501 is formed. The seal 3500 like this isattached on a computer 3502 as illustrated in FIG. 35B for example. Auser of the computer can know the intensity of a radiowave used in radiocommunication by the color change of the radio field intensitymeasurement device 3501. The radio field intensity measurement device ofthe present invention can measure a weak radiowave from a long distance,and has excellent visibility even when brightness in surroundings isintense e.g., under sunlight. Therefore, in the radio field intensitydetector of FIG. 35A, a user can measure a weak radiowave from a longdistance and can see the measured result with excellent visibility evenwhen brightness in surroundings is intense e.g., under sunlight.

FIG. 36A illustrates an example of a completed radio field intensitydetector according to the present invention. On a plate 3600, a radiofield intensity measurement device 3601 is formed. The plate 3600 likethis is attached on an inner wall of a radiowave measurement room 3602as illustrated in FIG. 36B. A design engineer of an antenna sends aradiowave by using the computer 3603 through an antenna 3604, andconfirms the color change of the inner wall of the radiowave measurementroom. Thus, the distribution of the radiowave is observed in a visiblemanner and the performance of the antenna 3604 can be measured. Theradio field intensity measurement device of the present invention canmeasure a weak radiowave from a long distance, and has excellentvisibility even when brightness in surroundings is intense e.g., undersunlight. Therefore, in the radio field intensity detector of FIG. 36A,a user can measure a weak radiowave from a long distance and can see themeasured result with excellent visibility even when brightness insurroundings is intense e.g., under sunlight.

As described above, the radio field intensity measurement device of thepresent invention can be provided in any object (including creatures) ofwhich the level of radiowave is to be detected.

This embodiment can be freely combined with any of the other embodimentmodes and embodiments. In other words, a radio field intensity detectorincluding the radio field intensity measurement device of the presetinvention can measure a weak radiowave from a long distance, and canhave excellent visibility even when brightness in surroundings isintense e.g., under sunlight.

Embodiment 5

Embodiment 5 will describe application of a radio field intensitydetector of the present invention. The radio field intensity detectorusing the radio field intensity measurement device of the presentinvention can be used as an amusement device utilizing a radiowave ascolors.

In this embodiment, application examples of the present invention andexamples of products in the application examples are described withreference to FIGS. 37A and 37B.

FIG. 37A illustrates an example of a completed radio field intensitydetector according to the present invention. On a plate 3700, a radiofield intensity measurement device 3701 is formed. A thin plastic plateis used as the plate 3700, and transistors forming the radio fieldintensity measurement device is formed on the thin plastic substrate, sothat it can be processed to be curved.

In the game console of this embodiment, a plurality of the plates 3700in FIG. 37A are combined to form a plate-like radio field intensitydetector 3710 having a height as high as a man, as illustrated in FIG.37B. A user 3702 sends a radiowave by swinging around a stick 3704including a radiowave emitter 3703, and enjoys color change of theplate-like radio field intensity detector 3710.

Sending of a radiowave by the user is interlocked with the movement ofthe user 3702 by combining a sensor such as an acceleration sensor or apiezoelectric sensor including a microphone or the like incorporated inthe stick 3704 to entertain the amusement device more. In addition, inFIG. 37B, the stick 3704 is illustrated as a member including aradiowave emitter; however, is not limited to a stick shape, and themember including a radiowave emitter may be operative by interlockingwith the movement of human body.

This embodiment employs a flat plate-like shape for the plate-like radiofield intensity detector 3710; however, may another shape such as sphereor irregular surface to enjoy the color change. Further, by combining aliquid crystal display device or a light-emitting device, an amusementdevice having wide visible variation may be formed.

As described above, a radio field intensity measurement device of thepresent invention can be provided in any object (including creatures) ofwhich the level of the radiowave is to be detected.

This embodiment can be freely combined with any of the other embodimentmodes and embodiments. In other words, a radio field intensity detectorincluding the radio field intensity measurement device of the presetinvention can measure a weak radiowave from a long distance, and canhave excellent visibility even when brightness in surroundings isintense e.g., under sunlight.

This application is based on Japanese Patent Application serial No.2006-309996 filed in Japan Patent Office on Nov. 16, 2006, the entirecontents of which are hereby incorporated by reference.

What is claimed is:
 1. A device comprising: a circuit comprising atransistor attached to a sheet material; a conductive film electricallyconnected to the transistor; a thin film secondary battery electricallyconnected to the conductive film through an anisotropic conductive filmor an anisotropic conductive paste; and a display element electricallyconnected to the circuit, wherein the transistor comprises indium,gallium, zinc and oxygen.
 2. The device according to claim 1, whereinthe sheet material is a film in which an antistatic material isdispersed in a resin, or a film to which an antistatic material isattached.
 3. The device according to claim 1, wherein the device is aradio field intensity measurement device.
 4. The device according toclaim 1, wherein the conductive film is an antenna.
 5. The deviceaccording to claim 1, wherein the conductive film is configured toconvert a received radiowave to an induction signal, and wherein thethin film secondary battery is charged by a direct signal generated fromthe induction signal.
 6. The device according to claim 4, wherein theantenna is one selected from the group consisting of a dipole antenna, aloop antenna, a Yagi antenna, a patch antenna, and a minute antenna. 7.The device according to claim 1, wherein the display element comprises aresistance heating element and a thermochromic element.
 8. The deviceaccording to claim 1, wherein the display element comprises a voltageapplication element and an electrochromic element.
 9. A devicecomprising: a circuit comprising a transistor attached to a sheetmaterial; a conductive film electrically connected to the transistor; athin film secondary battery electrically connected to the conductivefilm through an anisotropic conductive film or an anisotropic conductivepaste; and a display element electrically connected to the circuit,wherein the transistor comprises indium, gallium, zinc and oxygen, andwherein a color of the display element is changed in accordance with aradiowave received by the conductive film.
 10. The device according toclaim 9, wherein the radiowave is sent from a computer or a stickincluding a radiowave emitter.
 11. The device according to claim 9,wherein the sheet material is a film in which an antistatic material isdispersed in a resin, or a film to which an antistatic material isattached.
 12. The device according to claim 9, wherein the device is aradio field intensity measurement device.
 13. The device according toclaim 9, wherein the conductive film is an antenna.
 14. The deviceaccording to claim 9, wherein the conductive film is configured toconvert a received radiowave to an induction signal, and wherein thethin film secondary battery is charged by a direct signal generated fromthe induction signal.
 15. The device according to claim 13, wherein theantenna is one selected from the group consisting of a dipole antenna, aloop antenna, a Yagi antenna, a patch antenna, and a minute antenna. 16.The device according to claim 9, wherein the display element comprises aresistance heating element and a thermochromic element.
 17. The deviceaccording to claim 9, wherein the display element comprises a voltageapplication element and an electrochromic element.